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M

Mauro Mosca

University of Palermo

H指数:22

被引数:1,843

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From Photoluminescence Optimization to Green LED Fabrication: The Role of Molar Precursor Ratio in Carbon Dots

从光致发光优化到绿色LED制造：前驱体摩尔比对碳点的作

IF3.2

2026-02-270

OAAI

Defect Density Analysis of WOx and MoOx Thin Films Grown by Pulsed Laser Deposition for Heterojunction Solar Cell Applications

脉冲激光沉积法制备的WOx和MoOx薄膜缺陷密度分析及其在异质结太阳能电池中的应用

ACS Applied Energy Materials

IF5.5

2025-06-230

OA

Room-temperature tuning of mid-infrared optical phonons and plasmons in W-doped VO 2 thin films

OPTICAL MATERIALS

IF4.2

2024-08-012

OAAI

FAMILY PLANNING IN WOMEN AFFECTED BY RHEUMATOLOGICAL DISEASES: REAL-LIFE DATA FROM ITALY

风湿病影响女性的计划生育：来自意大利的真实世界数据

ANNALS OF THE RHEUMATIC DISEASES

IF20.6

2024-06-010

PRE

Tunable IR perfect absorbers enabled by tungsten doped VO2 thin films

IF4.5

2023-09-118

OA

Color Conversion Light-Emitting Diodes Based on Carbon Dots: A Review

基于碳点的颜色转换发光二极管: 综述

IF3.2

2022-08-0819

OAAI

Density of states characterization of TiO2 films deposited by pulsed laser deposition for heterojunction solar cells

IF9

2021-12-064

PREAI

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2020-12-015

OAAI

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-10-2025

OA

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-08-115

OAAI

Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire

IF5.1

2020-01-0147

OAAI

Resistive switching in microscale anodic titanium dioxide based memristors

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-01-0140

PREAI

New process of silicon carbide purification intended for silicon passivation

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-01-019

PREAI

Electrochemical Fabrication and Physicochemical Characterization of Metal/High-k Insulating Oxide/Polymer/Electrolyte Junctions

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2014-12-0911

PREAI

Electrochemical Fabrication of Metal/Oxide/Conducting Polymer Junction

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2011-01-0114

OAAI

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2007-10-05358

PREAI

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2007-02-0659

OAAI

Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity

APPLIED PHYSICS LETTERS

IF3.6

2006-08-1630

PREAI

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

APPLIED PHYSICS LETTERS

IF3.6

2006-04-1061

PREAI

Room-temperature polariton luminescence from a bulk GaN microcavity -: art. no. 033315

PHYSICAL REVIEW B

IF3.7

2006-01-1978

PREAI