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Haokun Ding

xia men university

H指数:7

被引数:136

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A Two-Terminal p-GaSe/n-Ge/Au Heterojunction Phototransistor With a Schottky Barrier Collector for Extension of Short Wavelength Infrared Band

一种具有肖特基势垒集电极的两端p-GaSe/n-Ge/Au异质结光电晶体管，用于扩展短波红外波段

IEEE Transactions on Electron Devices

IF3.2

2025-07-010

PRE

High performance n-MoSe2/p-Ge-GeSn MQW/n-Ge heterojunction phototransistor for extended short-wave infrared photodetection

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2025-01-090

PRE

Low-cost and efficient all group-IV visible/shortwave infrared dual-band photodetector

IF3.3

2024-06-131

PRE

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

在n-ge上溅射生长未掺杂的GeSn/Ge多量子阱，用于低成本可见/短波红外双波段光电探测

APPLIED SURFACE SCIENCE

IF6.9

2024-05-0110

PRE

High-Performance N-MoSe2/P-GeSn/N-Ge van der Waals Heterojunction Phototransistor for Short-Wave Infrared Photodetection

用于短波红外光电探测的高性能N-MoSe2/p-gesn/n-ge范德华异质结光电晶体管

ADVANCED OPTICAL MATERIALS

IF7.2

2023-11-286

PRE

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

通过高温溅射生长的Ge上Sn含量为16.5% 的GeSn单晶的有效应变弛豫

APPLIED SURFACE SCIENCE

IF6.9

2023-06-0110

PRE

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

以创纪录的高沉积温度获得物理气相沉积GeSn的强光致发光

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-05-306

PRE

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

IF6.6

2023-01-1210

OAAI

High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector

具有肖特基势垒集电极的高增益宽带p-WSe2/n-ge范德华异质结光电晶体管

IF9

2022-11-177

PRE

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2022-05-0116

PRE