D. Giubertoni

fondazione bruno kessler

H指数:18

被引数:1,166

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilities

金离子注入的硅选择性刻蚀：可行性及纳米制造能力

Micro and Nano Engineering

IF3.1

2025-07-040

OAAI

Integration of germanium-vacancy single photon emitters arrays in diamond nanopillars

金刚石纳米柱中锗空位单光子发射体阵列的集成

EPJ QUANTUM TECHNOLOGY

IF5.6

2025-02-180

Channel Nanoscaling of InGaZnO TFTs and Circuits via Focused Ion Beam

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-03-060

PRE

Enhancing the Deposition Rate and Uniformity in 3D Gold Microelectrode Arrays via Ultrasonic-Enhanced Template-Assisted Electrodeposition

通过超声增强模板辅助电沉积提高3D金微电极阵列的沉积速率和均匀性

SENSORS

IF3.5

2024-02-150

OAAI

Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography

通过结合电子束和聚焦离子束光刻技术用于金属氧化物基气体传感器的纳米热板制造

MICROMACHINES

IF3

2023-11-040

OAAI

Fabrication of a Highly NO2-Sensitive Gas Sensor Based on a Defective ZnO Nanofilm and Using Electron Beam Lithography

MICROMACHINES

IF3

2023-10-062

OAAI

Imaging of Antiferroelectric Dark Modes in an Inverted Plasmonic Lattice

反向等离子体晶格中反铁电暗模的成像

ACS NANO

IF16

2023-04-241

OAAI

Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritrons

SENSORS

IF3.5

2023-01-116

OAAI

Binder-free nanostructured germanium anode for high resilience lithium-ion battery (vol 411, 139832, 2022)

用于高回弹锂离子电池的无粘合剂纳米结构锗阳极 (411卷，139832，2022)

ELECTROCHIMICA ACTA

IF5.6

2022-08-010

PRE

Binder-free nanostructured germanium anode for high resilience lithium-ion battery

用于高回弹锂离子电池的无粘合剂纳米结构锗阳极

ELECTROCHIMICA ACTA

IF5.6

2022-04-0120

OAAI

Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-10-221

OAAI

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted Surface

APPLIED SURFACE SCIENCE

IF6.9

2015-11-012

OAAI

Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy

APPLIED SURFACE SCIENCE

IF6.9

2015-11-011

PREAI

H-tailored surface conductivity in narrow band gap In(AsN)

APPLIED PHYSICS LETTERS

IF3.6

2015-01-144

OAAI

Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry

APPLIED SURFACE SCIENCE

IF6.9

2014-10-014

PREAI

Combined evaluation of grazing incidence X-ray fluorescence and X-ray reflectivity data for improved profiling of ultra-shallow depth distributions

SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY

IF3.8

2014-09-0132

OAAI

Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon

APPLIED PHYSICS LETTERS

IF3.6

2012-12-055

PREAI

Identification of four-hydrogen complexes in In-rich InxGa1-xN (x > 0.4) alloys using photoluminescence, x-ray absorption, and density functional theory

PHYSICAL REVIEW B

IF3.7

2012-11-288

PREAI

Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS

JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY

IF3.1

2011-01-0118

PREAI

A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers

SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY

IF3.8

2010-06-0115

OAAI

D. Giubertoni

个人简介

教育背景

工作经历

荣誉奖项

研究方向