Sheng Li

Southeast University

H指数:22

被引数:1,784

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Comparative Study on High Threshold Voltage and Large Gate Swing Technologies of p-GaN Gate HEMT: Structural Scheme Versus Circuit Scheme

p-GaN栅HEMT高阈值电压和较大栅极摆幅技术的比较研究：结构方案与电路方案

IEEE Transactions on Power Electronics

IF6.5

2026-02-060

PRE

Understanding Forward and Reverse Overcurrent-Induced Electrical Parameter Degradations of Cascode GaN HEMTs

理解级联GaN HEMT正向和反向过电流引起的电参数退化

IEEE Journal of Emerging and Selected Topics in Power Electronics

IF4.9

2026-02-030

PRE

Crystal Structure-Dependent Magnetism in the Nb–Fe–Te Ternary Phase: A Case Study of Layered Telluride Material Nb1.1Fe1.8Te4

Crystal Growth and Design

IF3.4

2026-01-220

PRE

Physical properties of single crystal NaSmTe 2 — A new alkali metal rare-earth telluride with a triangular lattice

单晶NaSmTe₂的物理性质——一种具有三角晶格的新型碱金属稀土碲化物

Journal of Solid State Chemistry

IF3.5

2026-01-090

PRE

Design and Verification of 1200 V Si-IGBT/GaN Hybrid Switches

1200 V Si-IGBT/GaN混合开关的设计与验证

IEEE Transactions on Industrial Electronics

IF7.2

2026-01-010

PRE

1100-V, 600-A/cm² 4H-SiC Lateral IGBT on N-Sub/N-Epi Stack With P-Top Protected Lightly Doped Drift Region

IEEE Electron Device Letters

IF4.5

2025-12-260

PRE

Mobility-Boosting Technique With Floating N-Islands for 4H-SiC LDMOS

IEEE Electron Device Letters

IF4.5

2025-12-260

PRE

Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits

高电压蓝宝石上GaN单片功率集成电路隔离方法的研究

Micromachines 2025, Vol. 16, Page 1336

IF3

2025-11-270

OAAI

Exploring Short-Circuit Failure Mechanism of Cascode GaN HEMT

探索级联GaN HEMT的短路失效机理

IEEE Transactions on Power Electronics

IF6.5

2025-09-180

PRE

Self-Enhanced Unclamped-Inductive-Switching Robustness of High-Voltage p-GaN Gate HEMT on Sapphire Substrate

基于蓝宝石衬底的高压p-GaN栅HEMT的自增强无钳位电感开关鲁棒性

IEEE Transactions on Electron Devices

IF3.2

2025-08-010

PRE

Strong Enhancement on the Degradation of Organic Contaminants by Base-Activated Peroxymonosulfate in Phosphate Buffer Solution

磷酸盐缓冲溶液中，碱活化过一硫酸盐对有机污染物的降解表现出显著增强。

Korean Journal of Chemical Engineering

IF3.2

2025-07-080

PRE

Monolithically Integrated Bidirectional Gate ESD Protection Scheme of p-GaN Power HEMT by Dual-Gate Device Technology

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2025-02-010

PRE

Waste manganese sand activated peracetic acid for efficient degradation of emerging contaminants: Resource utilization and dual-phase mechanism

锰砂活化过氧乙酸高效降解新兴污染物：资源利用与双相机制

CHEMICAL ENGINEERING JOURNAL

IF13.2

2025-01-012

PRE

Ecological portraits: Mapping functional spectra and space characteristics of birds in China

GLOBAL ECOLOGY AND CONSERVATION

IF3.4

2025-01-010

PRE

Substrate bias effects in p-channel GaN-on-Si transistors

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2024-12-170

PRE

Overlooked role of protocatechuic acid in enhancing the selective elimination of sulfonamide antibiotics in Fe(III)/peroxymonosulfate process under actually neutral pH conditions

CHEMICAL ENGINEERING JOURNAL

IF13.2

2024-10-010

PRE

Spatial distribution and topographic gradient effects of habitat quality in the Chang-Zhu-Tan Urban Agglomeration, China

SCIENTIFIC REPORTS

IF3.9

2024-09-295

OAAI

Strong enhancement on acetaminophen elimination and effective control of chlorinated/brominated by-products generation in heat/ peroxymonosulfate system with sodium perborate

CHEMICAL ENGINEERING JOURNAL

IF13.2

2024-09-011

PRE

A Reduced-Order Impedance Model and Analytical Loop-Correction Stabilization Method for Electric Vehicle DC Charging Station

IEEE TRANSACTIONS ON POWER DELIVERY

IF3.7

2024-08-010

PRE

Hydrogen peroxide enhanced Cu(II)/peroxymonosulfate system for naproxen degradation in natural water matrix and simultaneously reduced the formation potential of halogenated by-products

过氧化氢增强的Cu(II)/过氧单硫酸盐体系在天然水基质中降解萘普生，同时降低了卤化副产物的形成潜力

CHEMICAL ENGINEERING JOURNAL

IF13.2

2024-08-012

PRE

Sheng Li

个人简介

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