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T

Takuya Hoshi

ntt, inc

H指数:13

被引数:611

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Control of Strained-InGaAs Channel Composition of InP-Based HEMTs in Low-Temperature Metal-Organic Vapor-Phase Epitaxy Growth

在低温金属有机气相外延生长中控制InP基高电子迁移率晶体管中应变InGaAs通道的组分

Physica Status Solidi A-Applications and Materials Science

IF1.9

2026-04-220

PRE

Back-barrier design of N-polar GaN-channel HEMTs with high-resistivity AlGaN buffer on C-face SiC substrate

N极性GaN沟道HEMT的高阻AlGaN缓冲层背栅设计，基于C面SiC衬底

Japanese Journal of Applied Physics

IF1.8

2025-12-010

PRE

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

IF3.2

2022-11-259

OAAI

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors (vol 11, 22401, 2021)

SCIENTIFIC REPORTS

IF3.9

2021-12-020

OAAI

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

SCIENTIFIC REPORTS

IF3.9

2021-11-1719

OAAI

Suppressed Self-Heating in Multi-Finger InP-Based DHBTs with Au Subcollector Fabricated on SiC Substrate by Surface-Activated Bonding

SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY AND APPLICATIONS 14

IF0

2016-08-245

PREAI

Linearity improvement of high-speed avalanche photodiodes using thin depleted absorber operating with higher order modulation format

IF3.3

2015-10-1322

OAAI

Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111) A surfaces

APPLIED PHYSICS LETTERS

IF3.6

2014-12-0910

PREAI

Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane AlxGa1-xN films grown on m-plane freestanding GaN substrates by NH3 source molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2009-02-2010

PREAI

Relation between AI vacancies and deep emission bands in AIN epitaxial films grown by NH3-source molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2007-06-1473

PREAI