Tae-Woo Kim

department of nano convergence engineering, jeonbuk national university, jeonju 561-756, republic of korea

H指数:21

被引数:1,992

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Anion-modulated bifunctional electrocatalytic activity of nickel telluride/cobalt telluride mesoporous nanosheets for high-efficiency and stable overall water splitting

镍碲化物/钴碲化物介孔纳米片阴离子调控的双功能电催化活性及其在高效稳定全水分解中的应用

J. Mater. Chem. A

IF9.5

2025-11-100

PRE

Enhancement of Sustainable Recycling Systems for Industrial Waste in South Korea via Hazardous Characteristics Analysis

ENVIRONMENTS

IF3.7

2024-07-080

Electronically modulated bimetallic telluride nanodendrites atop 2D nanosheets using a vanadium dopant enabling a bifunctional electrocatalyst for overall water splitting

使用钒掺杂剂在2D纳米片上进行电子调制的双金属碲化物纳米树枝，从而实现了用于整体水分解的双功能电催化剂

JOURNAL OF MATERIALS CHEMISTRY A

IF9.5

2024-01-018

PRE

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

晶圆上AlGaN/GaN hemt的可靠性评估: 电场应力对平均失效时间的影响

MICROMACHINES

IF3

2023-09-261

OAAI

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

MATERIALS

IF3.2

2023-09-090

OAAI

Multi-functional Al2O3-coated separators for high-performance lithium-ion batteries: Critical effects of particle shape

用于高性能锂离子电池的多功能Al2O3-coated隔膜: 颗粒形状的关键影响

CERAMICS INTERNATIONAL

IF5.6

2023-09-0110

OAAI

Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1-xN/GaN High-Electron-Mobility Transistors with Various Al Compositions

MATERIALS

IF3.2

2023-06-192

OAAI

Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

NANOMATERIALS

IF4.3

2023-02-270

OAAI

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

MATERIALS

IF3.2

2022-11-259

OAAI

Electron energy probability function measurement in a 2 MHz and 13.56 MHz dual-frequency capacitively coupled argon plasma

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2022-08-114

PRE

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

MICROMACHINES

IF3

2022-01-0415

OAAI

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors (vol 11, 22401, 2021)

SCIENTIFIC REPORTS

IF3.9

2021-12-020

OAAI

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

SCIENTIFIC REPORTS

IF3.9

2021-11-1719

OAAI

Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO2 Films on In0.53Ga0.47As

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-09-305

PREAI

Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate

MATERIALS

IF3.2

2021-06-161

OAAI

Improvement of the floating probe method for ion density and electron temperature measurement without compensation due to voltage reduction across the sheath

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2021-06-042

PRE

Local electron and ion density control using passive resonant coils in inductively coupled plasma

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2021-02-094

PRE

Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions

MATERIALS

IF3.2

2020-12-1911

OAAI

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

NANOMATERIALS

IF4.3

2020-10-3011

OAAI

A method for measuring plasma parameters and dielectric film thickness by analyzing transient voltages for deposition plasma processing monitoring

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2020-07-221

PRE

Tae-Woo Kim

个人简介

教育背景

工作经历

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