Kenji Natori - Publications, H-index & Citations

Kenji Natori

Institute of Science Tokyo

28H指数

357论文数

4.1K被引数

收录论文 19

发表时间

A Novel Filter With High Harmonics Attenuation and Small Dimension for Grid-Connected Inverter (vol 38, pg 2202, 2023)

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-06-01

PREAI

Koiwa, Kenta; Takahashi, Harutaka; Zanma, Tadanao; Liu, Kang-Zhi; Natori, Kenji; Sato, Yukihiko

Antiferroelectricity of titanite-type oxide SrTiGeO5 and its potential for power electronics applications

APPLIED PHYSICS LETTERS

IF3.6

2024-04-29

PREAI

Uohashi, Toshiya; Kuwano, Taro; Hagiwara, Manabu; Natori, Kenji; Deguchi, Kazuhiko; Taniguchi, Hiroki

A Novel Filter With High Harmonics Attenuation and Small Dimension for Grid-Connected Inverter

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2023-02-01

PREAI

Koiwa, Kenta; Takahashi, Harutaka; Zanma, Tadanao; Liu, Kang-Zhi; Natori, Kenji; Sato, Yukihiko

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity

MICROELECTRONICS RELIABILITY

IF1.9

2015-02-01

PREAI

Li, Wei; Sasaki, Akito; Oozu, Hideyuki; Aoki, Katsuaki; Kakushima, Kuniyuki; Kataoka, Yoshinori; Nishiyama, Akira; Sugii, Nobuyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Natori, Kenji; Iwai, Hiroshi

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

MICROELECTRONICS RELIABILITY

IF1.9

2015-02-01

PREAI

Li, Wei; Sasaki, Akito; Oozu, Hideyuki; Aoki, Katsuaki; Kakushima, Kuniyuki; Kataoka, Yoshinori; Nishiyama, Akira; Sugii, Nobuyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Natori, Kenji; Iwai, Hiroshi

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

APPLIED PHYSICS LETTERS

IF3.6

2014-01-14

PREAI

Tuokedaerhan, K.; Kakushima, K.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Iwai, H.

Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application

APPLIED PHYSICS LETTERS

IF3.6

2013-09-11

PREAI

Tuokedaerhan, K.; Tan, R.; Kakushima, K.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Hattori, T.; Iwai, H.

Valence number transition and silicate formation of cerium oxide films on Si(100)Si(100) 上氧化铈薄膜的价数转变和硅酸盐形成

VACUUM

IF3.9

2012-04-01

PREAI

Mamatrishat, M.; Kouda, M.; Kakushima, K.; Nohira, H.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Tsutsui, K.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

Electrical characteristics of asymmetrical silicon nanowire field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-12-02

OAAI

Sato, Soshi; Kakushima, Kuniyuki; Ohmori, Kenji; Natori, Kenji; Yamada, Keisaku; Iwai, Hiroshi

Extraction of additional interfacial states of silicon nanowire field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-06-09

OAAI

Sato, Soshi; Li, Wei; Kakushima, Kuniyuki; Ohmori, Kenji; Natori, Kenji; Yamada, Keisaku; Iwai, Hiroshi

Si nanowire FET and its modeling

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2011-05-05

PREAI

Iwai, Hiroshi; Natori, Kenji; Shiraishi, Kenji; Iwata, Jun-ichi; Oshiyama, Atsushi; Yamada, Keisaku; Ohmori, Kenji; Kakushima, Kuniyuki; Ahmet, Parhat

Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors

APPLIED PHYSICS LETTERS

IF3.6

2010-07-19

PREAI

Lee, Yeonghun; Kakushima, Kuniyuki; Shiraishi, Kenji; Natori, Kenji; Iwai, Hiroshi

Time-Delay Compensation by Communication Disturbance Observer for Bilateral Teleoperation Under Time-Varying Delay 时变时延下通信干扰观测器对双边遥操作的时延补偿

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2010-03-01

199

PREAI