Nobuyuki Sugii - Publications, H-index & Citations

Nobuyuki Sugii

Ningbo University

27H指数

387论文数

3.1K被引数

收录论文 16

发表时间

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity

MICROELECTRONICS RELIABILITY

IF1.9

2015-02-01

PREAI

Li, Wei; Sasaki, Akito; Oozu, Hideyuki; Aoki, Katsuaki; Kakushima, Kuniyuki; Kataoka, Yoshinori; Nishiyama, Akira; Sugii, Nobuyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Natori, Kenji; Iwai, Hiroshi

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

MICROELECTRONICS RELIABILITY

IF1.9

2015-02-01

PREAI

Li, Wei; Sasaki, Akito; Oozu, Hideyuki; Aoki, Katsuaki; Kakushima, Kuniyuki; Kataoka, Yoshinori; Nishiyama, Akira; Sugii, Nobuyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Natori, Kenji; Iwai, Hiroshi

A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode

IEICE TRANSACTIONS ON ELECTRONICS

IF0.6

2015-01-01

PREAI

Ishibashi, Koichiro; Sugii, Nobuyuki; Kamohara, Shiro; Usami, Kimiyoshi; Amano, Hideharu; Kobayashi, Kazutoshi; Cong-Kha Pham

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

APPLIED PHYSICS LETTERS

IF3.6

2014-01-14

PREAI

Tuokedaerhan, K.; Kakushima, K.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Iwai, H.

Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application

APPLIED PHYSICS LETTERS

IF3.6

2013-09-11

PREAI

Tuokedaerhan, K.; Tan, R.; Kakushima, K.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Hattori, T.; Iwai, H.

Valence number transition and silicate formation of cerium oxide films on Si(100)Si(100) 上氧化铈薄膜的价数转变和硅酸盐形成

VACUUM

IF3.9

2012-04-01

PREAI

Mamatrishat, M.; Kouda, M.; Kakushima, K.; Nohira, H.; Ahmet, P.; Kataoka, Y.; Nishiyama, A.; Tsutsui, K.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS

APPLIED SURFACE SCIENCE

IF6.9

2008-07-01

PREAI

Kakushima, K.; Okamoto, K.; Adachi, M.; Tachi, K.; Song, J.; Sato, S.; Kawanago, T.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Hattori, T.; Iwai, H.

Effects of N2-based annealing on the reliability characteristics of tungsten/La2O3/silicon capacitors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2007-01-01

PREAI

Molina, Joel; Tachi, Kiichi; Kakushima, Kuniyuki; Ahmet, Parhat; Tsutsui, Kazuo; Sugii, Nobuyuki; Hattori, Takeo; Iwai, Hiroshi

Silicon light-emitting transistor for on-chip optical interconnection

APPLIED PHYSICS LETTERS

IF3.6

2006-10-16

PREAI

Saito, Shin-ichi; Hisamoto, Digh; Shimizu, Haruka; Hamamura, Hirotaka; Tsuchiya, Ryuta; Matsui, Yuichi; Mine, Toshiyuki; Arai, Tadashi; Sugii, Nobuyuki; Torii, Kazuyoshi; Kimura, Shin'ichiro; Onai, Takahiro

Generation of misfit dislocations and stacking faults in supercritical thickness strained-Si/SiGe heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2006-01-19

PREAI

Kimura, Y; Sugii, N; Kimura, S; Inui, K; Hirasawa, W

Strained-silicon MOSFET process technology-control of impurity and germanium atoms at the hetero-interface

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2005-02-01

PREAI

Sugii, N; Kimura, Y; Kimura, S; Irieda, S; Morioka, J; Inada, T