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T

Toshiro Hiramoto

The University of Tokyo

42H指数
634论文数
7.1K被引数
收录论文 32
发表时间
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An Improved Graphical Method for Layout Optimization of Field-Limiting Ring Edge Termination一种改进的场限环边缘终止布局优化的图形方法
errIEEE Transactions on Electron Devices
IF3.2
err2026-06-10
err0
PREAI
errKiyoshi Takeuchi; Munetoshi Fukui; Takuya Saraya; Kazuo Itou; Toshihiko Takakura; Shinichi Suzuki; Hiroyuki Takase; Toshiro Hiramoto
err分享
err收藏
A simulation study on the operating principle of field-limiting ring edge termination using a quasi-2D three-terminal model基于准二维三端模型的场限环边缘终止结构工作原理的仿真研究
errJapanese Journal of Applied Physics
IF1.8
err2025-12-01
err0
PREAI
errTakeuchi, Kiyoshi; Fukui, Munetoshi; Saraya, Takuya; Itou, Kazuo; Takakura, Toshihiko; Suzuki, Shinichi; Takase, Hiroyuki; Hiramoto, Toshiro
err分享
err收藏
Reliability improvement of InGaOx FETs by adding Zn in atomic layer deposition process通过在原子层沉积工艺中添加Zn提高InGaOx FETs的可靠性
errJapanese Journal of Applied Physics
IF1.8
err2025-10-01
err0
PREAI
errSakai, Kota; Hikake, Kaito; Kim, Sung-hun; Itoya, Yuki; Saraya, Takuya; Hiramoto, Toshiro; Kobayashi, Masaharu
err分享
err收藏
Boosted gate MOS (BGMOS): Device/circuit cooperation scheme to achieve leakage-free giga-scale integration
errproceedings of the ieee
IF0
err2024-09-06
err57
PREAI
errInukai, T; Takamiya, M; Nose, K; Kawaguchi, H; Hiramoto, T; Sakurai, T
err分享
err收藏
Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristicsHfO2-based铁电薄膜的介观尺度晶粒形成及其对电学特性的影响
errNANO CONVERGENCE
IF11
err2022-11-12
err25
errOAAI
errKobayashi, Masaharu; Wu, Jixuan; Sawabe, Yoshiki; Takuya, Saraya; Hiramoto, Toshiro
err分享
err收藏
On the thickness dependence of the polarization switching kinetics in HfO2-based ferroelectric
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-08-23
err26
errOAAI
errSawabe, Yoshiki; Saraya, Takuya; Hiramoto, Toshiro; Su, Chun-Jung; Hu, Vita Pi-Ho; Kobayashi, Masaharu
err分享
err收藏
Reconfigurable Multivalue Logic Functions of a Silicon Ellipsoidal Quantum-Dot Transistor Operating at Room Temperature在室温下工作的硅椭球量子点晶体管的可重构多值逻辑功能
errACS NANO
IF16
err2021-10-21
err10
PREAI
errLee, Youngmin; Lee, Jin Woo; Lee, Sejoon; Hiramoto, Toshiro; Wang, Kang L.
err分享
err收藏
A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-12-21
err36
PREAI
errWu, Jixuan; Mo, Fei; Saraya, Takuya; Hiramoto, Toshiro; Kobayashi, Masaharu
err分享
err收藏
Five nanometre CMOS technology
errNATURE ELECTRONICS
IF40.9
err2019-12-06
err31
PREAI
errHiramoto, Toshiro
err分享
err收藏
Au/SiO2 Hybrid Bonding with 6-μm- Pitch Au Electrodes for 3D Structured Image Sensors
errSEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY AND APPLICATIONS 14
IF0
err2016-08-24
err6
PREAI
errHonda, Yuki; Hagiwara, Kei; Goto, Masahide; Watabe, Toshihisa; Nanba, Masakazu; Iguchi, Yoshinori; Saraya, Takuya; Kobayashi, Masaharu; Toshiyoshi, Hiroshi; Higurashi, Eiji; Hiramoto, Toshiro
err分享
err收藏
Observation of Single Electron Transport via Multiple Quantum States of a Silicon Quantum Dot at Room Temperature室温下通过硅量子点的多量子态观察单电子传输
errNANO LETTERS
IF9.1
err2013-12-17
err59
PREAI
errLee, Sejoon; Lee, Youngmin; Song, Emil B.; Hiramoto, Toshiro
err分享
err收藏
Modulation of peak-to-valley current ratio of Coulomb blockade oscillations in Si single hole transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-09-04
err12
PREAI
errLee, Sejoon; Lee, Youngmin; Song, Emil B.; Hiramoto, Toshiro
err分享
err收藏
Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5-x/Pt, Pt structure
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-06-10
err18
PREAI
errWang, Qi; Itoh, Yaomi; Hasegawa, Tsuyoshi; Tsuruoka, Tohru; Yamaguchi, Shu; Watanabe, Satoshi; Hiramoto, Toshiro; Aono, Masakazu
err分享
err收藏
Gate-tunable selective operation of single electron/hole transistor modes in a silicon single quantum dot at room temperature
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-02-25
err17
PREAI
errLee, Sejoon; Lee, Youngmin; Song, Emil B.; Wang, Kang L.; Hiramoto, Toshiro
err分享
err收藏
Nanoelectronics Research for Beyond CMOS Information Processing
errPROCEEDINGS OF THE IEEE
IF25.9
err2010-12-01
err17
PREAI
errBourianoff, George; Brillouet, Michel; Cavin, Ralph K., III; Hiramoto, Toshiro; Hutchby, James A.; Ionescu, Adrian M.; Uchida, Ken
err分享
err收藏
Regional, National, and International Nanoelectronics Research Programs: Topical Concentration and Gaps
errPROCEEDINGS OF THE IEEE
IF25.9
err2010-12-01
err3
PREAI
errBrillouet, Michel; Bourianoff, George I.; Cavin, Ralph Keary, III; Hiramoto, Toshiro; Hutchby, James A.; Ionescu, Adrian M.; Uchida, Ken
err分享
err收藏
Strong dependence of tunneling transport properties on overdriving voltage for room-temperature-operating single electron/hole transistors formed with ultranarrow [100] silicon nanowire channel
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-07-30
err13
PREAI
errLee, Sejoon; Hiramoto, Toshiro
err分享
err收藏
Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-02-20
err22
PREAI
errLee, Sejoon; Miyaji, Kousuke; Kobayashi, Masaharu; Hiramoto, Toshiro
err分享
err收藏
Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-08-02
err16
PREAI
errMiyaji, Kousuke; Hiramoto, Toshiro
err分享
err收藏
Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-04-03
err30
PREAI
errMiyaji, K; Saitoh, M; Hiramoto, T
err分享
err收藏

研究方向

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