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Pradip Dalapati

Jadavpur University

H指数:12

被引数:348

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Scalable all-solid-state top-gate logic gates from sonication-assisted liquid-phase-exfoliated MoS2 nanosheets

通过超声辅助液相剥离的MoS2纳米片制备可扩展的全固态顶栅逻辑门

Chemical Engineering Journal

IF13.2

2026-08-150

PRE

Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures

APPLIED PHYSICS LETTERS

IF3.6

2025-03-010

PRE

Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/ GaN MIS-HEMTs

APPLIED SURFACE SCIENCE

IF6.9

2025-02-010

PRE

Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2024-09-012

PRE

Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film

IF3.9

2023-07-013

PRE

Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2022-11-016

OAAI

The role of p-GaN layer thickness for the evaluation of high-performance and ultrafast GaInN/GaN multiple quantum wells UV photodetectors

OPTICAL MATERIALS

IF4.2

2022-05-016

PRE

Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2021-11-0117

PREAI

Understanding the degradation mechanisms of InGaN/GaN multiple quantum well UV photodetectors submitted to different current stresses

IF3.3

2021-07-215

PRE

In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

PHYSICAL REVIEW APPLIED

IF4.4

2021-02-056

OAAI

Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate

APPLIED PHYSICS LETTERS

IF3.6

2021-01-1117

PREAI

Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe

IF9.1

2020-11-257

OAAI

Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2020-11-0118

PREAI

Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template

OPTICAL MATERIALS

IF4.2

2020-11-0125

PREAI

Temperature dependence of current-voltage and carrier lifetime characteristics in InGaN blue light-emitting diode

OPTICAL AND QUANTUM ELECTRONICS

IF4

2020-01-177

PREAI

Influence of temperature on different optoelectronic characteristics of InGaN light emitting diodes

OPTICAL AND QUANTUM ELECTRONICS

IF4

2017-07-146

PREAI

Aggregation induced emission enhancement of pyrene-appended Schiff base luminophore and its photovoltaic effect

JOURNAL OF LUMINESCENCE

IF3.6

2016-07-015

PREAI

Influence of temperature on the performance of high power AlGaInP based red light emitting diode

OPTICAL AND QUANTUM ELECTRONICS

IF4

2014-07-1221

PREAI