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K

K. B. Jinesh

南洋理工大学

H指数:26

被引数:2,310

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Molybdenum Oxide Artificial Synapse: Enabling Cognitive Learning; Image Recognition; and Denoising

氧化钼人工突触：实现认知学习；图像识别；和去噪

ACS Applied Electronic Materials

IF4.7

2025-11-040

PRE

Molecular level inelastic electron tunneling spectroscopy of protoporphyrin using scanning tunneling microscope

利用扫描隧道显微镜对原卟啉进行分子层面的非弹性电子隧穿谱研究

SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY

IF4.6

2025-05-071

PRE

From Hebbian learning to pattern recognition: The role of oxygen vacancies in the synaptic responses of magnetron sputtered MoxOy devices

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-03-010

PRE

Observation of novel carbon nanocorals during the synthesis of graphene and investigations on their composition, morphological and structural properties

IF3.9

2024-12-011

OAAI

Tailoring of charge carriers with deposition temperature in pulsed laser deposited BiFeO3 thin films

APPLIED SURFACE SCIENCE

IF6.9

2024-07-011

PRE

Self-Assembly of Delta-Formamidinium Lead Iodide Nanoparticles to Nanorods: Study of Memristor Properties and Resistive Switching Mechanism

IF12.1

2024-01-200

PRE

Plasma-Enhanced Atomic Layer Deposition of Titanium Oxynitride (TiO x N y ) Thin Films and Their Neuromorphic Applications

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-01-021

PRE

Effect of titanium dioxide nanocoating on the colour stability of room temperature vulcanizing maxillofacial silicone-an invitro study

CLINICAL ORAL INVESTIGATIONS

IF3.1

2023-11-030

PRE

Excitons and Trions in MoS2 Quantum Dots: The Influence of the Dispersing Medium

IF4.3

2022-02-1622

OAAI

Linear Weight Update and Large Synaptic Responses in Neuromorphic Devices Comprising Pulsed-Laser-Deposited BiFeO3

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-01-249

PRE

Synthesis of nanodiamonds using liquid-phase laser ablation of graphene and its application in resistive random access memory

IF3.9

2021-04-0112

OAAI

Resistive switching in formamidinium lead iodide perovskite nanocrystals: a contradiction to the bulk form

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-0117

PREAI

Programmable electronic synapse and nonvolatile resistive switches using MoS2 quantum dots

SCIENTIFIC REPORTS

IF3.9

2020-07-2433

OAAI

Vertical limits of resistive memory scaling: The detrimental influence of interface states

APPLIED PHYSICS LETTERS

IF3.6

2020-04-273

PREAI

Influence of surfactants on the electronic properties of liquid-phase exfoliated graphene

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2019-01-017

PREAI

Raman and scanning tunneling spectroscopic investigations on graphene-silver nanocomposites

JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES

IF6.8

2018-09-0122

OAAI

Low power organic field effect transistors with copper phthalocyanine as active layer

JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES

IF6.8

2018-09-0127

OAAI

Hybrid Perovskite Nanoparticles for High-Performance Resistive Random Access Memory Devices: Control of Operational Parameters through Chloride Doping

ADVANCED MATERIALS INTERFACES

IF4.4

2016-08-1175

PREAI

Gate controllable resistive random access memory devices using reduced graphene oxide

APPLIED PHYSICS LETTERS

IF3.6

2016-04-1110

PREAI

Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries

用于锂离子电池的原子层沉积 (ALD) SnO2阳极，具有出色的循环能力

IF17.1

2013-09-01121

PREAI