Guohao Yu

Chinese Academy of Sciences

H指数:22

被引数:1,894

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650-V E-Mode GaN Tri-Gate MIS-HEMTs With Gate-Buffer Coupled Structure to Suppress Substrate-Induced Crosstalk

650-V E-Mode GaN Tri-Gate MIS-HEMTs with Gate-Buffer Coupled Structure to Suppress Substrate-Induced Crosstalk

IEEE Electron Device Letters

IF4.5

2026-01-120

PRE

P-Type Electrical Activation in GaN by Mg Ion Implantation for PN Junctions

通过Mg离子注入在GaN中实现P型电激活以制备PN结

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS

IF2

2025-12-010

PRE

GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure

通过低温MBE生长，沟道细分和单场板结构实现的击穿电压超过2500 V的GaN高电子迁移率晶体管

APPLIED PHYSICS EXPRESS

IF2.2

2025-11-010

PRE

Integration of μLED and GaN 2T1C Circuit Based on Hydrogen-Treated p-GaN Technology

基于氢处理 <italic>p</italic>-GaN 技术的 μLED 与 GaN 2T1C 电路集成

IEEE Electron Device Letters

IF4.5

2025-10-140

PRE

Enhancement-Mode GaN Monolithic Bidirectional Switch With Integrated Gate Driver for High Temperature Application

增强型GaN单片双向开关及其集成门极驱动器，适用于高温应用

IEEE Electron Device Letters

IF4.5

2025-09-230

PRE

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries

FRONTIERS OF OPTOELECTRONICS

IF5.2

2025-03-140

OAAI

γBMGC: A Comprehensive and Accurate Database for Screening TMAO-Associated Cardiovascular Diseases

MICROORGANISMS

IF4.2

2025-01-210

OAAI

Improved threshold voltage stability for GaN p-channel field effect transistors by hydrogen plasma treatment

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2025-01-160

PRE

Enhanced luminescence efficiency in GaN-based blue laser diodes by H plasma technology

OPTICS EXPRESS

IF3.3

2024-09-100

High-performance GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2024-06-060

PRE

In-Plane Radiation of Surface Plasmon Polaritons Excited by Free Electrons

自由电子激发的表面等离子体激元的面内辐射

MICROMACHINES

IF3

2024-05-302

OAAI

Improved Gate Stability of Metal-Insulator-Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-01-110

PRE

Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate

PLASMONICS

IF4.3

2024-01-100

PRE

Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies

中红外频率下GaN双通道hemt的极化特性

PLASMONICS

IF4.3

2023-09-271

PRE

Gate leakage mechanisms of the AlGaN/GaN HEMT with fluorinated graphene passivation

氟化石墨烯钝化AlGaN/GaN HEMT的栅漏机制

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-08-012

PRE

Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-05-163

PRE

Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature

APPLIED PHYSICS LETTERS

IF3.6

2023-02-091

PRE

Monolithic high-performance micro-LEDs using planar-geometry pixelation process for high-resolution micro-display applications

APPLIED PHYSICS LETTERS

IF3.6

2022-12-142

PRE

Bandwidth-enhanced magnetoelectric antenna based on composite bulk acoustic resonators

基于复合体声波谐振器的带宽增强磁电天线

APPLIED PHYSICS LETTERS

IF3.6

2022-07-1925

PRE

High quality of N-polar GaN film fabricated by layer transfer technology using high selective material removal rate of CMP

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-04-015

PRE

Guohao Yu

个人简介

教育背景

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