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A
Aryan Afzalian
imec
25
H指数
160
论文数
5.8K
被引数
0
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21
发表时间
发表时间
IF
被引数
Low-resistance contacts for p-type monolayer tungsten diselenide transistors using metallic layered Nb0.3W0.7Se2
用于p型单层二硒化钨晶体管的低电阻接触,采用层状金属Nb0.3W0.7Se2
Nature Electronics
IF
40.9
2026-03-16
0
PRE
AI
Zheng Sun; Aryan Afzalian; Peng Wu; Huairuo Zhang; Sergiy Krylyuk; Rahul Tripathi; Hao-Yu Lan; Yuanqiu Tan; Jun Cai; Geoffrey Pourtois; Albert Davydov; Zhihong Chen; Joerg Appenzeller
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Oxide induced degradation in MoS2 field-effect transistors
氧化物诱导的退化在MoS2场效应晶体管中
npj 2D Materials and Applications
IF
8.8
2026-03-11
0
OA
AI
Fabian Ducry; Benoit Van Troeye; Mauro Dossena; Mathieu Luisier; Geoffrey Pourtois; Aryan Afzalian
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Phase and orientation evolution of Bismuth during heteroepitaxy on ML-MoS2/Sapphire (0001) surfaces
铋在异质外延生长于ML-MoS2/蓝宝石(0001)表面的相和取向演化
Journal of Materials Science
IF
3.9
2025-09-05
0
PRE
AI
Gaohang He; Aryan Afzalian; Olivier Richard; Stefanie Sergeant; Thomas Nuytten; Surajit Sutar; Kaustuv Banerjee; César Javier Lockhart de la Rosa; Gouri Sankar Kar; Stefan De Gendt; Clement Merckling
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Mobility calculation in disordered WS2-Al2O3 stacks from first principles
无序WS2-Al2O3堆叠的迁移率第一性原理计算
npj 2D Materials and Applications
IF
8.8
2025-08-01
0
OA
AI
Mauro Dossena; Benoit Van Troeye; Fabian Ducry; Jiang Cao; Aryan Afzalian; Geoffrey Pourtois; Mathieu Luisier
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Impact of Interface and Surface Oxide Defects on WS2 Electronic Properties from First Principles
界面和表面氧化物缺陷对WS2电子性质的影响:第一性原理研究
ACS NANO
IF
16
2025-03-18
0
PRE
AI
Van Troeye, B; Ducry, F; Dossena, M; Luisier, M; Afzalian, A; Pourtois, G
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Fully coupled electron-phonon transport in two-dimensional-material-based devices using efficient FFT-based self-energy calculations ☆
COMPUTER PHYSICS COMMUNICATIONS
IF
3.4
2025-02-01
0
OA
AI
Duflou, Rutger; Gaddemane, Gautam; Houssa, Michel; Afzalian, Aryan
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Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection
SENSORS
IF
3.5
2023-06-07
0
OA
AI
Afzalian, Aryan; Flandre, Denis
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Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study
NPJ 2D MATERIALS AND APPLICATIONS
IF
8.8
2023-05-31
9
OA
AI
Duflou, Rutger; Pourtois, Geoffrey; Houssa, Michel; Afzalian, Aryan
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The Impact of Electron Phonon Scattering, Finite Size and Lateral Electric Field on Transport Properties of Topological Insulators: A First Principles Quantum Transport Study
电子声子散射、有限尺寸和横向电场对拓扑绝缘体输运性质的影响: 第一性原理量子输运研究
MATERIALS
IF
3.2
2023-02-15
1
OA
AI
Akhoundi, Elaheh; Houssa, Michel; Afzalian, Aryan
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Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors
NPJ 2D MATERIALS AND APPLICATIONS
IF
8.8
2021-01-04
48
OA
AI
Afzalian, Aryan
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Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
SCIENTIFIC REPORTS
IF
3.9
2019-01-17
33
OA
AI
Vasen, T.; Ramvall, P.; Afzalian, A.; Doornbos, G.; Holland, M.; Thelander, C.; Dick, K. A.; Wernersson, L. -E.; Passlack, M.
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Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration
SCIENTIFIC REPORTS
IF
3.9
2017-11-07
7
OA
AI
Holland, Martin; van Dal, Mark; Duriez, Blandine; Oxland, Richard; Vellianitis, Georgios; Doornbos, Gerben; Afzalian, Aryan; Chen, Ta-Kun; Hsieh, Chih-Hua; Ramvall, Peter; Vasen, Tim; Yeo, Yee-Chia; Passlack, Matthias
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Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures
高温下用作UV探测器的SOI p-i-n横向二极管的量子效率提高
IEEE SENSORS JOURNAL
IF
4.5
2017-03-15
5
PRE
AI
Novo, Carla; Buehler, Rudolf; Baptista, Joao; Giacomini, Renato; Afzalian, Aryan; Flandre, Denis
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Capacitive Biosensing of Bacterial Cells: Sensitivity Optimization
IEEE SENSORS JOURNAL
IF
4.5
2016-02-01
9
PRE
AI
Couniot, Numa; Afzalian, Aryan; Van Overstraeten-Schlogel, Nancy; Francis, Laurent A.; Flandre, Denis
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Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study
APPLIED PHYSICS LETTERS
IF
3.6
2016-01-26
6
PRE
AI
Lu, Anh Khoa Augustin; Pourtois, Geoffrey; Agarwal, Tarun; Afzalian, Aryan; Radu, Iuliana P.; Houssa, Michel
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Capacitive biosensing of bacterial cells: Analytical model and numerical simulations
SENSORS AND ACTUATORS B-CHEMICAL
IF
7.7
2015-05-01
32
PRE
AI
Couniot, N.; Afzalian, A.; Van Overstraeten-Schlogel, N.; Francis, L. A.; Flandre, D.
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Signal-to-noise ratio optimization for detecting bacteria with interdigitated micro electrodes
SENSORS AND ACTUATORS B-CHEMICAL
IF
7.7
2013-12-01
39
PRE
AI
Couniot, N.; Flandre, D.; Francis, L. A.; Afzalian, A.
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Scaling laws and performance improvements of integrated biosensor microarrays with multi-pixel per spot
SENSORS AND ACTUATORS B-CHEMICAL
IF
7.7
2012-05-01
6
PRE
AI
Couniot, N.; Afzalian, A.; Flandre, D.
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Nanowire transistors without junctions
NATURE NANOTECHNOLOGY
IF
34.9
2010-02-21
2.1K
PRE
AI
Colinge, Jean-Pierre; Lee, Chi-Woo; Afzalian, Aryan; Akhavan, Nima Dehdashti; Yan, Ran; Ferain, Isabelle; Razavi, Pedram; O'Neill, Brendan; Blake, Alan; White, Mary; Kelleher, Anne-Marie; McCarthy, Brendan; Murphy, Richard
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Junctionless multigate field-effect transistor
APPLIED PHYSICS LETTERS
IF
3.6
2009-02-06
983
OA
AI
Lee, Chi-Woo; Afzalian, Aryan; Akhavan, Nima Dehdashti; Yan, Ran; Ferain, Isabelle; Colinge, Jean-Pierre
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研究方向
暂无研究方向
合作学者
合作期刊
J
Joerg Appenzeller
H 指数: 64 · 论文数: 302
Y
Yee‐Chia Yeo
H 指数: 54 · 论文数: 661
K
Kimberly A. Dick
H 指数: 53 · 论文数: 328
S
Stefan De Gendt
H 指数: 52 · 论文数: 1.0K
D
Denis Flandre
H 指数: 51 · 论文数: 1.2K
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