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Stefan De Gendt

interuniversity microelectronics centre
H指数:52
被引数:1.2万

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A High-Resolution EUV Zinc-Oximate Resist: Why Post-exposure Bake Fails to Improve Lithography Performance

高分辨率EUV锌-氧肟酸盐抗蚀剂:为何后曝光烘烤无法改善光刻性能

2026-04-290
PRE
Electronic effects of localized strain in graphene

石墨烯局域应变的电子效应

Carbon
IF11.6
2026-02-040
PRE
Fundamental understanding of exposure and process chemistry of Sn-based metal oxide resists: effects of ambient environment during post-exposure delay and bake

基于锡的金属氧化物抗蚀剂的光刻胶曝光和工艺化学基础理解:后曝光延迟和烘烤过程中环境气氛的影响

2026-01-010
PRE
Transfer of Substitutionally Implanted Graphene

取代性植入石墨烯的转移

2025-03-240
PRE
Achieving High Substitutional Incorporation in Mn-Doped Graphene

在Mn掺杂的石墨烯中实现高取代掺入

2024-06-281
PRE