未登录

I

Ina T. Martin

case western reserve university

H指数:18

被引数:888

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Metastable dark degradation and light recovery in UV exposed commercial TOPCon

商业TOPCon在紫外曝光下的亚稳态暗降解与光恢复

Solar Energy Materials and Solar Cells

IF6.3

2026-08-180

OAAI

PATCH: A deep learning method to assess heterogeneity of artistic practice in historical paintings

PATCH：一种用于评估历史绘画中艺术实践异质性的深度学习方法

Science Advances

IF12.5

2026-04-170

OA

Adhesively Bonded Copper and Polyimide for Flexible Printed Circuit Boards: A Data-Driven Degradation Study Under Accelerated Aging

胶接铜和聚酰亚胺用于柔性印刷电路板：基于数据的加速老化降解研究

ACS Applied Electronic Materials

IF4.7

2025-11-120

PRE

High-Intensity UV Exposure for the Rapid Screening of Silicon Photovoltaic Architectures

IEEE JOURNAL OF PHOTOVOLTAICS

IF2.6

2025-10-010

PRE

Local Measurement of Janus Particle Cap Thickness

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-08-2426

PREAI

Organofunctional Silane Modification of Aluminum-Doped Zinc Oxide Surfaces as a Route to Stabilization

铝掺杂氧化锌表面的有机官能硅烷改性作为稳定化途径

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-05-1213

OAAI

Degradation of transparent conductive oxides: Interfacial engineering and mechanistic insights

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2015-12-0122

PREAI

Angle-Resolved XPS Analysis and Characterization of Mono layer and Multi layer Si lane Films for DNA Coupling to Silica

IF3.9

2013-03-13109

PREAI

Dislocation-limited open circuit voltage in film crystal silicon solar cells

APPLIED PHYSICS LETTERS

IF3.6

2012-09-217

PREAI

High-Resolution X-ray Photoelectron Spectroscopy of Mixed Silane Monolayers for DNA Attachment

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2011-08-2527

PREAI

Nanoscale measurements of local junction breakdown in epitaxial film silicon solar cells

APPLIED PHYSICS LETTERS

IF3.6

2010-09-0115

PREAI

Controlled Nitrogen Doping and Film Colorimetrics in Porous TiO2 Materials Using Plasma Processing

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2010-06-0763

PREAI

Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °C

APPLIED PHYSICS LETTERS

IF3.6

2010-05-1820

PREAI

Material quality requirements for efficient epitaxial film silicon solar cells

APPLIED PHYSICS LETTERS

IF3.6

2010-02-1534

PREAI

The effect of low frequency pulse-shaped substrate bias on the remote plasma deposition of a-Si : H thin films

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2009-11-2719

PREAI

Investigation of inductively coupled Ar and CH4/Ar plasmas and the effect of ion energy on DLC film properties

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2006-08-1860

PREAI

On the importance of ions and ion-molecule reactions to plasma-surf ace interface reactions

JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY

IF2.7

2002-05-0153

PREAI