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A

Andrei A. Gismatulin

Siberian Branch of the Russian Academy of Sciences

14H指数
63论文数
528被引数
收录论文 22
发表时间
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Defects with a negative correlation energy as memory traps in a flash memory. An illusion?负相关能缺陷作为闪存中的存储陷阱。是一种幻象吗？
errMaterials Science and Engineering B-Advanced Functional Solid-State Materials
IF4.6
err2026-07-01
err0
PREAI
errGritsenko, V. A.; Gismatulin, A. A.; Temnov, D. E.; Volgina, E. A.; Mahmoodian, M. M.
err分享
err收藏
Boron-irradiated Si3N4: the origin of the defect responsible for the red shift of fundamental absorption edge and increase of refractive index硼辐照Si3N4：导致基本吸收边红移和折射率增加的缺陷起源
errApplied Surface Science
IF6.9
err2025-12-30
err0
PREAI
errV.A. Gritsenko; T.V. Perevalov; Yu.N. Novikov; A.A. Gismatulin
err分享
err收藏
Charge transport mechanism in boron-irradiated Si3N4硼辐照Si3N4中的电荷传输机制
errJournal of Physics and Chemistry of Solids
IF4.9
err2025-11-29
err0
PREAI
errV.A. Gritsenko; Yu N. Novikov; A.A. Gismatulin
err分享
err收藏
Exponentially strong leakage current increase in the proton-irradiated silicon nitride在质子辐照的氮化硅中，漏电流呈指数级急剧增加。
errScripta Materialia
IF5.6
err2025-09-01
err0
PREAI
errA.A. Gismatulin; V.A. Gritsenko
err分享
err收藏
Short-range order and memory properties of silicon oxide -based memristors
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-04-01
err1
PREAI
errKamaev, G. N.; Novikov, Yu. N.; Prosvirin, I. P.; Gismatulin, A. A.; Khanas, A. R.; Zenkevich, A. V.; Gritsenko, V. A.
err分享
err收藏
Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-12-09
err1
PREAI
errYushkov, I. D.; Gismatulin, A. A.; Prosvirin, I. P.; Kamaev, G. N.; Marin, D. V.; Vergnat, M.; Volodin, V. A.
err分享
err收藏
Origin of exponentially large increase in the leakage current in alumina films depending on the ALD synthesis temperature
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-08-05
err0
PREAI
errGismatulin, A. A.; Novikov, Yu. N.; Andreeva, N. V.; Mazing, D. S.; Gritsenko, V. A.
err分享
err收藏
Electron and hole bipolar injection in magnesium oxide films
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-01-26
err0
PREAI
errPerevalov, Timofey V.; Islamov, Damir R.; Zalyalov, Timur M.; Gismatulin, Andrei A.; Golyashov, Vladimir A.; Tereshchenko, Oleg E.; Gorshkov, Dmitry V.; Gritsenko, Vladimir A.
err分享
err收藏
Oxygen Vacancies as Traps Responsible for La-Doped Hf0.5Zr0.5O2 Charge Transport
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2023-07-20
err5
PREAI
errPerevalov, Timofey V.; Gismatulin, Andrei A.; Prosvirin, Igor P.; Pustovarov, Vladimir A.; Gritsenko, Vladimir A.
err分享
err收藏
Short-range order and charge transport in silicon-rich pyrolytic silicon oxynitride
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2023-01-01
err1
PREAI
errNovikov, Yu. N.; Gismatulin, A. A.; Prosvirin, I. P.; Bobovnikov, P. G.; Krasnikov, G. Ya.; Gritsenko, V. A.
err分享
err收藏
Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2022-12-01
err12
PREAI
errPerevalov, T. V.; Volodin, V. A.; Kamaev, G. N.; Gismatulin, A. A.; Cherkova, S. G.; Prosvirin, I. P.; Astankova, K. N.; Gritsenko, V. A.
err分享
err收藏
Bipolar conductivity in ferroelectric La:HfZrO films
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-07-02
err4
PREAI
errPerevalov, Timofey V.; Gismatulin, Andrei A.; Gritsenko, Vladimir A.; Prosvirin, Igor' P.; Mehmood, Furqan; Mikolajick, Thomas; Schroeder, Uwe
err分享
err收藏
Charge transport mechanism in the forming-free memristor based on silicon nitride
errSCIENTIFIC REPORTS
IF3.9
err2021-01-28
err23
errOAAI
errGismatulin, Andrei A.; Kamaev, Gennadiy N.; Kruchinin, Vladimir N.; Gritsenko, Vladimir A.; Orlov, Oleg M.; Chin, Albert
err分享
err收藏
Charge transport mechanism in La:HfO2La:HfO2中的电荷传输机制
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-10-05
err13
PREAI
errGritsenko, V. A.; Gismatulin, A. A.
err分享
err收藏
Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-05-19
err26
PREAI
errGismatulin, A. A.; Orlov, Oleg M.; Gritsenko, V. A.; Kruchinin, V. N.; Mizginov, D. S.; Krasnikov, G. Ya
err分享
err收藏
Charge transport mechanism in SiNx-based memristor
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-12-19
err25
PREAI
errGismatulin, A. A.; Gritsenko, V. A.; Yen, T-J; Chin, A.
err分享
err收藏
Charge transport mechanism in periodic mesoporous organosilica low-k dielectric
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-08-22
err12
PREAI
errGismatulin, A. A.; Gritsenko, V. A.; Seregin, D. S.; Vorotilov, K. A.; Baklanov, M. R.
err分享
err收藏
Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-06-13
err28
PREAI
errVolodin, V. A.; Kamaev, G. N.; Gritsenko, V. A.; Gismatulin, A. A.; Chin, A.; Vergnat, M.
err分享
err收藏
Optical properties and charge transport of textured Sc2O3 thin films obtained by atomic layer deposition
errAPPLIED SURFACE SCIENCE
IF6.9
err2019-06-01
err14
PREAI
errLebedev, M. S.; Kruchinin, V. N.; Afonin, M. Yu.; Korolkov, I. V.; Saraev, A. A.; Gismatulin, A. A.; Gritsenko, V. A.
err分享
err收藏
All Nonmetal Resistive Random Access Memory
errSCIENTIFIC REPORTS
IF3.9
err2019-04-16
err29
errOAAI
errYen, Te Jui; Gismatulin, Andrei; Volodin, Vladimir; Gritsenko, Vladimir; Chin, Albert
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
T
Thomas Mikolajick
H 指数: 99 · 论文数: 793
U
Uwe Schroeder
H 指数: 79 · 论文数: 337
A
Albert Chin
H 指数: 51 · 论文数: 651
I
Igor P. Prosvirin
H 指数: 50 · 论文数: 426
M
Mikhaı̈l R. Baklanov
H 指数: 44 · 论文数: 540
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