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Yu. N. Novikov

Institute of Semiconductor Physics SB RAS

14H指数
74论文数
801被引数
收录论文 11
发表时间
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Boron-irradiated Si3N4: the origin of the defect responsible for the red shift of fundamental absorption edge and increase of refractive index硼辐照Si3N4：导致基本吸收边红移和折射率增加的缺陷起源
errApplied Surface Science
IF6.9
err2025-12-30
err0
PREAI
errV.A. Gritsenko; T.V. Perevalov; Yu.N. Novikov; A.A. Gismatulin
err分享
err收藏
Charge transport mechanism in boron-irradiated Si3N4硼辐照Si3N4中的电荷传输机制
errJournal of Physics and Chemistry of Solids
IF4.9
err2025-11-29
err0
PREAI
errV.A. Gritsenko; Yu N. Novikov; A.A. Gismatulin
err分享
err收藏
Short-range order and memory properties of silicon oxide -based memristors
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-04-01
err1
PREAI
errKamaev, G. N.; Novikov, Yu. N.; Prosvirin, I. P.; Gismatulin, A. A.; Khanas, A. R.; Zenkevich, A. V.; Gritsenko, V. A.
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err收藏
Origin of exponentially large increase in the leakage current in alumina films depending on the ALD synthesis temperature
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-08-05
err0
PREAI
errGismatulin, A. A.; Novikov, Yu. N.; Andreeva, N. V.; Mazing, D. S.; Gritsenko, V. A.
err分享
err收藏
Memory properties and short-range order in silicon oxynitride-based memristors
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-06-05
err2
PREAI
errNovikov, Yu. N.; Kamaev, G. N.; Prosvirin, I. P.; Gritsenko, V. A.
err分享
err收藏
Short-range order and charge transport in silicon-rich pyrolytic silicon oxynitride
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2023-01-01
err1
PREAI
errNovikov, Yu. N.; Gismatulin, A. A.; Prosvirin, I. P.; Bobovnikov, P. G.; Krasnikov, G. Ya.; Gritsenko, V. A.
err分享
err收藏
Multiphonon trap ionization mechanism in amorphous SiNx
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2022-04-01
err4
PREAI
errNovikov, Yu N.; Gritsenko, V. A.
err分享
err收藏
Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2020-09-01
err5
PREAI
errNovikov, Yu N.; Gritsenko, V. A.
err分享
err收藏
The charge transport mechanism in amorphous boron nitride
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2020-09-01
err7
PREAI
errNovikov, Yu N.; Gritsenko, V. A.
err分享
err收藏
Charge transport mechanism in amorphous alumina
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-06-05
err66
PREAI
errNovikov, Yu. N.; Gritsenko, V. A.; Nasyrov, K. A.
err分享
err收藏
Electronic structure of amorphous Si3N4: Experiment and numerical simulation非晶态Si3N4的电子结构: 实验和数值模拟
errAPPLIED SURFACE SCIENCE
IF6.9
err1997-04-01
err28
PREAI
errGritsenko, VA; Morokov, YN; Novikov, YN
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
I
Igor P. Prosvirin
H 指数: 50 · 论文数: 426
V
V. A. Gritsenko
H 指数: 41 · 论文数: 319
A
A. Zenkevich
H 指数: 25 · 论文数: 146
K
K. A. Nasyrov
H 指数: 16 · 论文数: 25
A
Andrei A. Gismatulin
H 指数: 14 · 论文数: 63
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