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K

K. Cherkaoui

tyndall national institute and university college cork

H指数:26

被引数:2,245

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Ozone Surface Pretreatment for Enhanced β-Ga2O3/Dielectric Interface Engineering

臭氧表面预处理以增强β-Ga2O3/介质界面工程

ACS Applied Materials & Interfaces

IF0

2026-05-290

PRE

Investigation of defects in 3C-SiC using deep level transient spectroscopy

利用深能级瞬态谱研究3C-SiC中的缺陷

Journal of Physics D: Applied Physics

IF3.2

2025-11-240

OAAI

Sidewall passivation of AlxGa1-xAs homojunctions with wet chemicals and field-effect passivation by ALD oxides and nitrides

SURFACES AND INTERFACES

IF6.3

2024-09-010

OAAI

Insights into Multilevel Resistive Switching in Monolayer MoS2

洞察单层MoS2中的多级电阻开关

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-01-1061

PREAI

Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

APPLIED PHYSICS LETTERS

IF3.6

2017-01-195

OAAI

Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation

APPLIED PHYSICS LETTERS

IF3.6

2012-02-2731

OAAI

Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2012-01-010

PREAI

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

APPLIED PHYSICS LETTERS

IF3.6

2011-11-2152

PREAI

Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

NANOSCALE RESEARCH LETTERS

IF4.1

2011-05-3121

OAAI

Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2011-01-0140

OA

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

APPLIED PHYSICS LETTERS

IF3.6

2010-08-0652

OAAI

Electron energy band alignment at the (100)Si/MgO interface

(100)Si/MgO界面的电子能带排列

APPLIED PHYSICS LETTERS

IF3.6

2010-02-0110

OAAI

Electrical characterization of the soft breakdown failure mode in MgO layers

APPLIED PHYSICS LETTERS

IF3.6

2009-07-0711

OAAI

Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods

APPLIED PHYSICS LETTERS

IF3.6

2009-03-11102

OA

In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2008-01-1457

PREAI

Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2008-01-0154

PREAI