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Scott Monaghan

IMDEA Materials Institute

H指数:25

被引数:2,031

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Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films

APPLIED PHYSICS LETTERS

IF3.6

2023-07-063

OA

Atomic-Layer-Deposited TiO2-IrO X Nanoscale Thin-Film Electrocatalysts for Water and Chloride Oxidation: Influence of Local Phase Separation

ACS APPLIED ENERGY MATERIALS

IF5.5

2023-06-061

OA

Structural and electrical characterisation of PtS from H2S-converted Pt

H2S-converted Pt的结构和电气特性

APPLIED MATERIALS TODAY

IF6.9

2021-12-019

OAAI

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

飞秒激光诱导薄钼层下非晶硅薄膜的晶化

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-07-2816

OAAI

Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation

IF4.3

2019-10-1011

OAAI

Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

在400 °C下生长的大面积超薄PtSe2薄膜中量子限制诱导的半金属到半导体的演化

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2019-09-0390

OAAI

Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes

层状二硒化铂基光电二极管的宽光谱光响应

IF9.1

2018-02-20145

OAAI

Rhenium-doped MoS2 films

APPLIED PHYSICS LETTERS

IF3.6

2017-11-1442

OAAI

Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-06-0110

PREAI

The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

APPLIED PHYSICS LETTERS

IF3.6

2017-04-0618

OAAI

Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

APPLIED PHYSICS LETTERS

IF3.6

2017-01-195

OAAI

Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

APPLIED PHYSICS LETTERS

IF3.6

2014-01-0823

OAAI

Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2012-01-010

PREAI

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

APPLIED PHYSICS LETTERS

IF3.6

2011-11-2152

PREAI

Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

NANOSCALE RESEARCH LETTERS

IF4.1

2011-05-3121

OAAI

Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2011-01-0140

OA

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

APPLIED PHYSICS LETTERS

IF3.6

2010-08-0652

OAAI

Electrical characterization of the soft breakdown failure mode in MgO layers

APPLIED PHYSICS LETTERS

IF3.6

2009-07-0711

OAAI

Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods

APPLIED PHYSICS LETTERS

IF3.6

2009-03-11102

OA

Atomic scale model interfaces between high-k hafnium silicates and silicon

PHYSICAL REVIEW B

IF3.7

2007-06-0525

PREAI