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Eileen O'Connor

University of Ottawa

H指数:26

被引数:4,901

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Media, gender, and physical education: analyzing 'Jornal das Moças' and its impact on Brazilian society (1930s-1960s)

Sport Education and Society

IF2.7

2025-11-010

PRE

Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

APPLIED PHYSICS LETTERS

IF3.6

2017-01-195

OAAI

Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

APPLIED PHYSICS LETTERS

IF3.6

2014-01-0823

OAAI

Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

APPLIED PHYSICS LETTERS

IF3.6

2012-04-026

OA

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

APPLIED PHYSICS LETTERS

IF3.6

2011-11-2152

PREAI

In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

APPLIED PHYSICS LETTERS

IF3.6

2011-07-2616

PREAI

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

APPLIED PHYSICS LETTERS

IF3.6

2010-08-0652

OAAI

Electrical characterization of the soft breakdown failure mode in MgO layers

APPLIED PHYSICS LETTERS

IF3.6

2009-07-0711

OAAI

Energy barriers at interfaces between (100) InxGa1-xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2

(100) InxGa1-xAs (0 ≤ x ≤ 0.53) 与原子层沉积的Al2O3和HfO2之间的界面处的能垒

APPLIED PHYSICS LETTERS

IF3.6

2009-05-2123

OA

Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods

APPLIED PHYSICS LETTERS

IF3.6

2009-03-11102

OA

Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

(100)GaAs与原子层沉积的Al2O3和HfO2的界面处的能垒

APPLIED PHYSICS LETTERS

IF3.6

2008-11-2427

OAAI

Sensitivity to mobile phone base station signals

ENVIRONMENTAL HEALTH PERSPECTIVES

IF9.8

2008-02-010

OAAI

In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2008-01-1457

PREAI

Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2008-01-0154

PREAI

Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays -: art. no. 201114

APPLIED PHYSICS LETTERS

IF3.6

2005-05-1262

OAAI

Electrical evaluation of defects at the Si(100)/HfO2 interface

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2004-01-0120

PREAI