Shenglei Zhao

xidian university

H指数:21

被引数:1,720

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Investigation of High-Temperature Characteristics of GaN p-Channel Field-Effect Transistors at 200 °C

研究200 °C下GaN p沟道场效应晶体管的高温特性

IEEE Transactions on Electron Devices

IF3.2

2026-07-310

PRE

Enhanced High-Temperature Performance of In-Situ SiN GaN MIS-HEMTs With an AlN Back Barrier Up to 500 °C

原位SiN GaN MIS-HEMT器件通过AlN背势垒在500°C下的高温性能提升

IEEE Transactions on Electron Devices

IF3.2

2026-07-090

PRE

Breakdown Mechanisms of Vertical GaN Junction Field-Effect Transistors and Enhanced Figure of Merit Using Gradient Doping Channel

垂直GaN结型场效应晶体管的击穿机制及通过梯度掺杂通道提升的优值

IEEE Transactions on Electron Devices

IF3.2

2026-06-020

PRE

A >2.5 kV, 93 ps GaN Diode Avalanche Shaper With 1.68 GW/cm² Peak Power Density

>2.5 kV，93 ps GaN 二极管雪崩整形器，其峰值功率密度为 1.68 GW/cm<sup>2</sup>

IEEE Electron Device Letters

IF4.5

2026-04-080

PRE

High-performance GaN HEMTs with over 2 MV cm−1 breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure

具有超过2 MV cm−1击穿场强和73% PAE的高性能GaN HEMTs，通过AlN超后势垒/超薄GaN通道异质结构实现

Nanotechnology

IF2.8

2026-02-250

PRE

Design and Optimization of Fractional-Turn Transformer With Low Core Loss and Profile

分数匝变压器的设计与优化，具有低铁损和低轮廓

IEEE Transactions on Industrial Electronics

IF7.2

2026-01-160

PRE

Multi-level Fusion Early Warning of Rock Burst Utilizing Acoustic Emission and Electromagnetic Radiation Chaotic Prediction and Image Feature Mining: Case Studies

基于声发射和电磁辐射混沌预测及图像特征挖掘的岩爆多级融合早期预警：案例研究

Rock Mechanics and Rock Engineering

IF6.6

2025-08-200

PRE

Symmetrical GaN-Based Vertical Module With Low Interference Integration and High Thermal Performance for PoL Converters

对称的GaN基垂直模块，具有低干扰集成和高热性能，适用于PoL转换器

IEEE Transactions on Industrial Electronics

IF7.2

2025-07-250

PRE

PFVnet, a feature enhancement network for low recognition coal and rock images

PFVnet，一种用于低识别度煤岩图像的特征增强网络

SCIENTIFIC REPORTS

IF3.9

2025-04-290

Enhanced convolutional neural network-based prediction and source mechanism interpretation of high-energy microseismic events in coal mines

基于改进卷积神经网络的高能微震事件预测与震源机制解释在煤矿中的应用

PHYSICS OF FLUIDS

IF4.3

2025-04-020

PRE

Enhancement-mode GaN/AlGaN p-channel field effect transistors with ID > 110 mA/mm achieved through source/drain tunnel junction contacts

通过源极/漏极隧道结触点实现ID> 110 mA/mm的增强型GaN/AlGaN p沟道场效应晶体管

APPLIED PHYSICS LETTERS

IF3.6

2025-04-010

PRE

710 GHz GaN gradient doped Schottky barrier diode with high breakdown voltage

710 GHz GaN梯度掺杂肖特基势垒二极管高击穿电压

APPLIED PHYSICS LETTERS

IF3.6

2025-03-010

PRE

Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure

MICROMACHINES

IF3

2024-12-210

OAAI

750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers

MICROMACHINES

IF3

2024-11-300

OAAI

Acoustic emission and electromagnetic radiation of coal-rock effective and interference signal identification utilizing generative adversarial learning and image feature mining

PHYSICS OF FLUIDS

IF4.3

2024-11-130

PRE

Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer

APPLIED PHYSICS LETTERS

IF3.6

2024-11-070

PRE

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

MICROMACHINES

IF3

2024-10-310

OAAI

P-GaN-gate GaN power high-electron mobility transistors with Mg-acceptor Re-passivation realized by ammonia plasma treatment

APPLIED PHYSICS LETTERS

IF3.6

2024-10-210

PRE

High quality heavy Sn doping (β-Ga2O3 film with high mobility grown by time division transport Metal Organic Chemical Vapor Deposition

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-10-010

PRE

Strategy to solve the thermal issue of ultra-wide bandgap semiconductor gallium oxide field effect transistor

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-05-013

PRE

Shenglei Zhao

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