Xingfu Wang

henan university of science and technology

H指数:36

被引数:4,164

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Modification of primary silicon in hypereutectic Al-Si alloys by chemical modifiers: A comprehensive review

通过化学变质剂对过共晶Al-Si合金中初生硅的改性：一项综合评述

Journal of Alloys and Compounds

IF6.3

2025-10-140

PRE

Insight into the mechanism of ultrahigh detectivity ultraviolet detector based on transferred GaN nanobelts

基于转移GaN纳米带的超高清灵敏度紫外探测器机理研究

SURFACES AND INTERFACES

IF6.3

2025-05-010

PRE

A silicon-based InGaN/GaN microbelt blue light-emitting-diode fabricated via low-temperature direct bonding

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-010

PRE

MoS2/GaN Junction Field-Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio via Thickness Engineering for Logic Inverters

ADVANCED FUNCTIONAL MATERIALS

IF19

2024-09-060

PRE

High-performance GaN ultraviolet polarization-sensitive photodetector based on ferroelectric polarization LiNbO3

APPLIED PHYSICS LETTERS

IF3.6

2024-08-051

PRE

Computer-Aided Multiphoton Microscopy Diagnosis of 5 Different Primary Architecture Subtypes of Meningiomas

LABORATORY INVESTIGATION

IF4.2

2024-04-012

PRE

Enhanced hot-electron injection across Au/GaN heterojunction by the piezo-phototronic effect for efficient sub-bandgap photodetection

NANO ENERGY

IF17.1

2024-04-014

PRE

Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector

NANO RESEARCH

IF9

2024-03-021

PRE

Graphene/GaN ultraviolet photodetector performance regulated by a HfO2 insulating layer

APPLIED PHYSICS LETTERS

IF3.6

2024-01-305

PRE

High Modulation Depth Terahertz Modulator Based on Side-Polished Terahertz Fiber

JOURNAL OF LIGHTWAVE TECHNOLOGY

IF4.8

2024-01-010

PRE

A dual-band photodetector based on a mixed-dimensional WSe2/GaN junction

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2024-01-015

PRE

Fowler-Nordheim tunneling mechanism Graphene/GaN ultraviolet position-sensitive detector with high precision for optoelectronic demodulation applications

Fowler-nordheim隧穿机理光电解调用高精度石墨烯/氮化镓紫外位置敏感探测器

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2023-10-012

PRE

Optimized photoresponse performances in vertical and horizontal photodetectors based on freestanding GaN membranes

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2023-10-011

PRE

Synergistic Ion-Anchoring Passivation for Perovskite Solar Cells with Efficiency Exceeding 24% and Ultra-Ambient Stability

钙钛矿太阳能电池的协同离子锚定钝化，效率超过24% 和超环境稳定性

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-08-096

PRE

Interface engineering by inserting Al2O3 tunneling layer to enhance the performance of graphene/GaAs heterojunction photodetector

通过插入Al2O3隧穿层来增强石墨烯/GaAs异质结光电探测器性能的界面工程

SURFACES AND INTERFACES

IF6.3

2023-07-0114

PRE

GaN/Gr (2D)/Si (3D) Combined High- Performance Hot Electron Transistors

ACS NANO

IF16

2023-05-015

PRE

Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance

具有增强紫外光响应性能的GaN纳米带的制备

APPLIED SURFACE SCIENCE

IF6.9

2023-03-015

PRE

Plasmonic hot-hole injection combined with patterned substrate for performance improvement in trapezoidal PIN GaN microwire self-powered ultraviolet photodetector

等离子体热空穴注入与图案化衬底相结合，可提高梯形PIN GaN微丝自供电紫外光电探测器的性能

NANO ENERGY

IF17.1

2022-12-019

PRE

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-11-084

PRE

Realization of specific localized surface plasmon resonance in Au-modified Ni nanoplasmonics for efficient detection

APPLIED SURFACE SCIENCE

IF6.9

2022-06-015

PRE

Xingfu Wang

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