Jabez J. McClelland - Publications, H-index & Citations

Jabez J. McClelland

national institute of standards and technology

38H指数

224论文数

4.7K被引数

收录论文 36

发表时间

130-nm CMOS-Integrated Superparamagnetic Tunnel Junction-Based p-bit 130纳米CMOS集成的超顺磁隧道结基p比特

IEEE Electron Device Letters

IF4.5

2026-05-26

PREAI

Ju-Young Yoon; Nuno Caçoilo; Advait Madhavan; Jabez J. McClelland; Shun Kanai; Hideo Ohno; Shunsuke Fukami; William A. Borders

Electron-beam induced modulation of surface conduction in hydrogen-terminated diamond 氢终止金刚石表面电导的电子束诱导调制

Diamond and Related Materials

IF5.1

2026-05-05

OAAI

Sebastian Wood; Evgheni Strelcov; Junyeob Song; Albert Davydov; Jabez J. McClelland; Andrei Kolmakov

ReRAM/CMOS Array Integration and Characterization via Design of Experiments ReRAM/CMOS阵列集成与实验设计表征

Advanced Electronic Materials

IF5.3

2025-07-21

OAAI

Imtiaz Hossen; William A. Borders; Advait Madhavan; Shweta Joshi; Patrick M. Braganca; Jabez J. McClelland; Brian D. Hoskins; Gina C. Adam

Signal size and resolution of scanning thermal microscopy in air and vacuum

SCIENTIFIC REPORTS

IF3.9

2025-04-01

OAAI

McClelland, Jabez J.; Strelcov, Evgheni; Chand, Ami

Measurement-driven Langevin modeling of superparamagnetic tunnel junctions

PHYSICAL REVIEW APPLIED

IF4.4

2024-07-23

OAAI

Pocher, Liam A.; Adeyeye, Temitayo N.; Gibeault, Sidra; Talatchian, Philippe; Ebels, Ursula; Lathrop, Daniel P.; McClelland, Jabez J.; Stiles, Mark D.; Madhavan, Advait; Daniels, Matthew W.

Measurement-driven neural-network training for integrated magnetic tunnel

PHYSICAL REVIEW APPLIED

IF4.4

2024-05-14

OAAI

Borders, William A.; Madhavan, Advait; Daniels, Matthew W.; Georgiou, Vasileia; Lueker-Boden, Martin; Santos, Tiffany S.; Braganca, Patrick M.; Stiles, Mark D.; McClelland, Jabez J.; Hoskins, Brian D.

Programmable electrical coupling between stochastic magnetic tunnel junctions

PHYSICAL REVIEW APPLIED

IF4.4

2024-03-29

OAAI

Gibeault, Sidra; Adeyeye, Temitayo N.; Pocher, Liam A.; Lathrop, Daniel P.; Daniels, Matthew W.; Stiles, Mark D.; Mcclelland, Jabez J.; Borders, William A.; Ryan, Jason T.; Talatchian, Philippe; Ebels, Ursula; Madhavan, Advait

Temperature Distribution in TaOx Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-04-10

OAAI

Meng, Jingjia; Goodwill, Jonathan M.; Strelcov, Evgheni; Bao, Kefei; McClelland, Jabez J.; Skowronski, Marek

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

PHYSICAL REVIEW APPLIED

IF4.4

2022-07-18

OAAI

Goodwill, Jonathan M.; Prasad, Nitin; Hoskins, Brian D.; Daniels, Matthew W.; Madhavan, Advait; Wan, Lei; Santos, Tiffany S.; Tran, Michael; Katine, Jordan A.; Braganca, Patrick M.; Stiles, Mark D.; McClelland, Jabez J.

Spatially Resolved Potential and Li-Ion Distributions Reveal Performance-Limiting Regions in Solid-State Batteries 空间分辨的电势和锂离子分布揭示了固态电池中的性能限制区域

ACS ENERGY LETTERS

IF18.2

2021-10-19

OAAI

Fuller, Elliot J.; Strelcov, Evgheni; Weaver, Jamie L.; Swift, Michael W.; Sugar, Joshua D.; Kolmakov, Andrei; Zhitenev, Nikolai; McClelland, Jabez J.; Qi, Yue; Dura, Joseph A.; Talin, A. Alec

Mutual control of stochastic switching for two electrically coupled superparamagnetic tunnel junctions

PHYSICAL REVIEW B

IF3.7

2021-08-19

OAAI

Talatchian, Philippe; Daniels, Matthew W.; Madhavan, Advait; Pufall, Matthew R.; Jue, Emilie; Rippard, William H.; McClelland, Jabez J.; Stiles, Mark D.

Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

APPLIED PHYSICS LETTERS

IF3.6

2021-07-29

OAAI

Zaslavsky, A.; Richter, C. A.; Shrestha, P. R.; Hoskins, B. D.; Le, S. T.; Madhavan, A.; McClelland, J. J.

Streaming Batch Eigenupdates for Hardware Neural Networks

FRONTIERS IN NEUROSCIENCE

IF3.2

2019-08-06

OAAI

Hoskins, Brian D.; Daniels, Matthew W.; Huang, Siyuan; Madhavan, Advait; Adam, Gina C.; Zhitenev, Nikolai; McClelland, Jabez J.; Stiles, Mark D.

Direct-Write Lithiation of Silicon Using a Focused Ion Beam of Li+使用Li的聚焦离子束对硅进行直写锂化

ACS NANO

IF16

2019-07-08

OAAI

McGehee, William R.; Strelcov, Evgheni; Oleshko, Vladimir P.; Soles, Christopher; Zhitenev, Nikolai B.; McClelland, Jabez J.

Spontaneous current constriction in threshold switching devices

NATURE COMMUNICATIONS

IF15.7

2019-04-09

OAAI

Goodwill, Jonathan M.; Ramer, Georg; Li, Dasheng; Hoskins, Brian D.; Pavlidis, Georges; McClelland, Jabez J.; Centrone, Andrea; Bain, James A.; Skowronski, Marek

Defect Evolution of Ion-Exposed Single-Wall Carbon Nanotubes

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2019-01-03

PREAI

Kalbacova, Jana; Garratt, Elias; Rodriguez, Raul D.; Walker, Angela R. Hight; Twedt, Kevin A.; Fagan, Jeffrey A.; Madeira, Teresa. I.; McClelland, Jabez J.; Nikoobakht, Babak; Zahn, Dietrich R. T.

Stateful characterization of resistive switching TiO2 with electron beam induced currents (vol 8, 1972, 2017)

NATURE COMMUNICATIONS

IF15.7

2018-01-24

OAAI

Hoskins, Brian D.; Adam, Gina C.; Strelcov, Evgheni; Zhitenev, Nikolai; Kolmakov, Andrei; Strukov, Dmitri B.; McClelland, Jabez J.

Stateful characterization of resistive switching TiO2 with electron beam induced currents

NATURE COMMUNICATIONS

IF15.7

2017-12-07

OAAI

Hoskins, Brian D.; Adam, Gina C.; Strelcov, Evgheni; Zhitenev, Nikolai; Kolmakov, Andrei; Strukov, Dmitri B.; McClelland, Jabez J.