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Anand Sharma

Chandigarh University

H指数:14

被引数:868

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Next-generation g-C₃N₄ Photocatalysts for hydrogen evolution: Synergistic roles of doping, surface Engineering and heterojunctions

下一代g-C₃N₄光催化剂用于氢气进化：掺杂、表面工程和异质结的协同作用

materials science and engineering: b

IF0

2026-03-200

PRE

Elucidating the role of ZnO in hydrogen evolution reactions: a performance-centric review

阐明ZnO在析氢反应中的作用: 以性能为中心的综述

Environmental Sciences Europe

IF6

2026-01-260

OAAI

Advanced functional spinel ferrite based nanomaterials for targeted wastewater treatment

基于先进功能尖晶石铁氧体的纳米材料用于靶向废水处理

Journal of Molecular Structure

IF4.7

2025-10-060

PRE

High-Performance Low-Voltage Thin-Film Transistors: Experimental and Simulation Validation of Atmospheric Pressure Plasma-Assisted Li5AlO4 Metal Oxide Solution Processing

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-08-091

PRE

Magnetotransport properties of epitaxial films and Hall bar devices of the correlated layered ruthenate Sr3Ru2O7

PHYSICAL REVIEW MATERIALS

IF3.4

2024-04-011

PRE

Solution processed Li-Al2O3/LiNbO3/Li-Al2O3 stacked gate dielectric for a non-volatile ferroelectric thin film transistor

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2023-10-010

OAAI

Solution processed low operating voltage SnO2 thin film transistor by using Li2SnO3/TiO2 stacked gate dielectric

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2023-03-017

PRE

Photocatalytic dye degradation and antimicrobial activities of Pure and Ag-doped ZnO using Cannabis sativa leaf extract

SCIENTIFIC REPORTS

IF3.9

2020-05-12208

OAAI

Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2019-12-1136

PREAI

Role of Electron Donation of TiO2 Gate Interface for Developing Solution-Processed High-Performance One-Volt Metal-Oxide Thin Film Transistor Using Ion-Conducting Gate Dielectric

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2019-07-2926

PREAI

Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2019-03-0129

PREAI

Solution processed Li5AlO4 dielectric for low voltage transistor fabrication and its application in metal oxide/quantum dot heterojunction phototransistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2018-01-0135

PREAI