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Vishwas Acharya

indian institute of technology system (iit system)

H指数:12

被引数:279

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Reliability Analysis of MOS Devices Using Burst Pulse CV Measurement Technique

使用突发脉冲CV测量技术对MOS器件进行可靠性分析

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

IF2.3

2025-12-010

PRE

Fabrication of an In2O3 NP-based high-performance low-operating voltage phototransistor and tuning of its photosensitivity from UV to blue region

基于In2O3 NP的高性能低工作电压光电晶体管的制备及其在紫外到蓝光区域的光敏性调节

IF5.1

2025-01-010

OA

High-Performance Low-Voltage Thin-Film Transistors: Experimental and Simulation Validation of Atmospheric Pressure Plasma-Assisted Li5AlO4 Metal Oxide Solution Processing

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-08-091

PRE

Solution processed Li-Al2O3/LiNbO3/Li-Al2O3 stacked gate dielectric for a non-volatile ferroelectric thin film transistor

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2023-10-010

OAAI

Solution processed low operating voltage SnO2 thin film transistor by using Li2SnO3/TiO2 stacked gate dielectric

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2023-03-017

PRE

High-x SrTiO3 thin film as gate dielectric of a solution processed SnO2 thin film transistor

高x SrTiO3薄膜作为溶液处理的SnO2薄膜晶体管的栅极电介质

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-03-0113

PRE

Application of a microwave synthesized ultra-smooth a-C thin film for the reduction of dielectric/semiconductor interface trap states of anoxide thin film transistor

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-017

PRE

Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2019-12-1136

PREAI

Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2019-03-0129

PREAI