F. Jiménez-Molinos - Publications, H-index & Citations

F. Jiménez-Molinos

facultad de ciencias

27H指数

120论文数

2.4K被引数

收录论文 19

发表时间

Conductance quantization in memristive devices with electrodeposited Prussian blue-based dielectrics 具有电沉积普鲁士蓝基介电质的忆阻器件中的电导量子化

Materials Science in Semiconductor Processing

IF4.6

2025-11-12

OAAI

A. Cantudo; L.B. Avila; M.A. Villena; F. Jiménez-Molinos; C. Ducarme; A. Lopes Temporao; A. Moureaux; F. Abreu Araujo; C.K. Müller; J.B. Roldán

Statistical, simulation and modeling analysis of variability in memristors with single and bilayer dielectrics of HfO2 and Al2O3, a comparison HfO2和Al2O3单层及双层介电材料的忆阻器中变异性的统计分析、模拟与建模比较

CHAOS SOLITONS & FRACTALS

IF5.6

2025-07-01

PREAI

Cantudo, A.; Jimenez-Molinos, F.; Ruiz, P. Q.; Lopez, A.; Villena, M. A.; Gonzalez, M. B.; Campabadal, F.; Roldan, J. B.

Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-01

OAAI

Jimenez-Molinos, F.; Vinuesa, G.; Garcia, H.; Duenas, S.; Castan, H.; Gonzalez, M. B.; Campabadal, F.; Roldan, J. B.

Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-02-15

OAAI

Roldan, Juan B.; Cantudo, Antonio; Maldonado, David; Aguilera-Pedregosa, Cristina; Moreno, Enrique; Swoboda, Timm; Jimenez-Molinos, Francisco; Yuan, Yue; Zhu, Kaichen; Lanza, Mario; Munoz Rojo, Miguel

Variability in HfO2-based memristors described with a new bidimensional statistical technique

NANOSCALE

IF5.1

2024-01-01

OAAI

Acal, C.; Maldonado, D.; Cantudo, A.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-01-01

OAAI

Maldonado, D.; Vinuesa, G.; Aldana, S.; Aguirre, F. L.; Cantudo, A.; Garcia, H.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, R.; Miranda, E.; Duenas, S.; Castan, H.; Roldan, J. B.

TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance

FRONTIERS IN NEUROSCIENCE

IF3.2

2023-09-19

OAAI

Maldonado, David; Cantudo, Antonio; Perez, Eduardo; Romero-Zaliz, Rocio; Quesada, Emilio Perez-Bosch; Mahadevaiah, Mamathamba Kalishettyhalli; Jimenez-Molinos, Francisco; Wenger, Christian; Roldan, Juan Bautista

Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-06-12

PREAI

Garcia, H.; Vinuesa, G.; Garcia-Ochoa, E.; Aguirre, F. L.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.; Miranda, E.; Duenas, S.; Castan, H.

Variability in Resistive Memories 电阻式存储器的可变性

ADVANCED INTELLIGENT SYSTEMS

IF6.1

2023-03-14

OAAI

Roldan, Juan. B.; Miranda, Enrique; Maldonado, David; Mikhaylov, Alexey. N.; Agudov, Nikolay., V; Dubkov, Alexander. A.; Koryazhkina, Maria. N.; Gonzalez, Mireia. B.; Villena, Marco. A.; Poblador, Samuel; Saludes-Tapia, Mercedes; Picos, Rodrigo; Jimenez-Molinos, Francisco; Stavrinides, Stavros. G.; Salvador, Emili; Alonso, Francisco. J.; Campabadal, Francesca; Spagnolo, Bernardo; Lanza, Mario; Chua, Leon. O.

Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories

MICROMACHINES

IF3

2023-03-10

OAAI

Aguilera-Pedregosa, Cristina; Maldonado, David; Gonzalez, Mireia B.; Moreno, Enrique; Jimenez-Molinos, Francisco; Campabadal, Francesca; Roldan, Juan B.

Comprehensive study on unipolar RRAM charge conduction and stochastic features: a simulation approach

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-01-20

PREAI

Maldonado, D.; Gomez-Campos, F. M.; Gonzalez, M. B.; Roldan, A. M.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.

On the Thermal Models for Resistive Random Access Memory Circuit Simulation 关于电阻式随机存取存储器电路仿真的热模型

NANOMATERIALS

IF4.3

2021-05-11

OAAI

Roldan, Juan B.; Gonzalez-Cordero, Gerardo; Picos, Rodrigo; Miranda, Enrique; Palumbo, Felix; Jimenez-Molinos, Francisco; Moreno, Enrique; Maldonado, David; Baldoma, Santiago B.; Moner Al Chawa, Mohamad; de Benito, Carol; Stavrinides, Stavros G.; Sune, Jordi; Chua, Leon O.

Current transient response and role of the internal resistance in HfOx-based memristors

APPLIED PHYSICS LETTERS

IF3.6

2020-12-28

PREAI

Gonzalez, M. B.; Maestro-Izquierdo, M.; Jimenez-Molinos, F.; Roldan, J. B.; Campabadal, F.

Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-04-02

PREAI

Aldana, S.; Garcia-Fernandez, P.; Romero-Zaliz, R.; Gonzalez, M. B.; Jimenez-Molinos, F.; Gomez-Campos, F.; Campabadal, F.; Roldan, J. B.

Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach

MATERIALS

IF3.2

2019-11-13

OAAI

Rodriguez, N.; Maldonado, D.; Romero, F. J.; Alonso, F. J.; Aguilera, A. M.; Godoy, A.; Jimenez-Molinos, F.; Ruiz, F. G.; Roldan, J. B.

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2017-07-24

PREAI

Aldana, S.; Garcia-Fernandez, P.; Rodriguez-Fernandez, Alberto; Romero-Zaliz, R.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Gomez-Campos, F.; Roldan, J. B.

A comprehensive analysis on progressive reset transitions in RRAMs

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-04-29

PREAI

Villena, M. A.; Roldan, J. B.; Jimenez-Molinos, F.; Sune, J.; Long, S.; Miranda, E.; Liu, M.

Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

APPLIED PHYSICS LETTERS

IF3.6

2003-10-13

PREAI

Gámiz, F; Cartujo-Cassinello, P; Jiménez-Molinos, F; Carceller, JE; Cartujo, P