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Xinpei Duan

china electronics technology group

H指数:9

被引数:388

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Single event upset mechanism transition and radiation hardening in 28 nm D flip-flops under proton irradiation

单粒子翻转机制转变及在28 nm D触发器中的抗辐射加固研究

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

IF1.3

2026-05-010

PRE

Ionic-Migration-Gated 2D Perovskite/MoS2 Junction Field-Effect Transistor for Ultralow-Power Neuromorphic Vision

离子迁移门控的2D钙钛矿/MoS2结型场效应晶体管用于超低功耗神经形态视觉

Laser & Photonics Reviews

IF10

2026-03-280

PRE

Radiation effects and hardening strategies of GaN HEMT power devices

GaN HEMT功率器件的辐照效应及硬化策略

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2026-01-210

PRE

Nonvolatile SRAM design with double-node upset self-recovery based on magnetic tunnel junctions and CMOS

基于磁隧道结和CMOS的双节点翻转自恢复非易失性SRAM设计

Radiation Effects and Defects in Solids

IF1.3

2026-01-010

PRE

High-reliability power-on reset circuit design with radiation hardening in 65 nm bulk CMOS process

65 nm体硅CMOS工艺中的抗辐射加固高可靠性上电复位电路设计

RADIATION EFFECTS AND DEFECTS IN SOLIDS

IF1.3

2025-09-010

PRE

Tunable optoelectronic response in van der Waals heterojunction transistors for artificial visual recognition

APPLIED PHYSICS LETTERS

IF3.6

2024-03-195

OA

Electrically Dynamic Configurable WSe2 Transistor and the Applications in Photodetector

电动态可配置WSe2晶体管及其在光电探测器中的应用

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-07-1211

OA

Ultrahigh gain hot-electron tunneling transistor approaching the collection limit

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2023-04-041

PRE

Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation

通过氧积累在其介电界面处具有扩大的范德华间隙的二硫化钼晶体管

NATURE ELECTRONICS

IF40.9

2022-12-0595

PRE

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

ADVANCED SCIENCE

IF14.1

2022-01-1721

OAAI

Schottky-Contacted WSe2 Hot-Electron Photodetectors with Fast Response and High Sensitivity

具有快速响应和高灵敏度的肖特基接触WSe2热电子光电探测器

IF6.7

2021-12-2016

PREAI

Amorphous B-doped graphitic carbon nitride quantum dots with high photoluminescence quantum yield of near 90% and their sensitive detection of Fe2+/Cd2+

SCIENCE CHINA-MATERIALS

IF7.4

2021-06-3029

OAAI

Polarization-Resolved Broadband MoS2/Black Phosphorus/MoS2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-03-3140

PREAI

High-Mobility and High-Responsivity MoS₂ Phototransistor Enabled by Rippled Mg Substrate Engineering

通过波纹化Mg衬底工程实现的具有高迁移率和响应度的MoS<sub>2</sub>光电晶体管

IEEE Transactions on Electron Devices

IF3.2

0

PRE