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H

Huynh V. Phuc

dong thap university

39H指数
214论文数
5.4K被引数
收录论文 80
发表时间
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Tunable topological phases and magneto-optical signatures in monolayer Pt 2 HgSe 3可调拓扑相及单层Pt₂HgSe₃中的磁光特征
errCHAOS SOLITONS & FRACTALS
IF5.6
err2026-07-11
err0
PREAI
errHuynh V. Phuc; Nguyen N. Hieu; Chuong V. Nguyen
err分享
err收藏
Excited states intra- and inter-band optical absorption in Hellmann quantum dots赫尔曼量子点中激发态的带内和带间光学吸收
errMicro and Nanostructures
IF3
err2026-06-16
err0
PREAI
errHuynh V. Phuc
err分享
err收藏
Exploring vibrational properties; Rashba spin splitting; and phonon-limited carrier mobility in Janus WBPX2 (X = S; Se; Te) monolayers探索Janus WBPX2（X = S; Se; Te）单层材料的振动性质、拉什巴自旋劈裂以及声子限制的载流子迁移率
errrsc adv.
IF0
err2026-05-20
err0
errOAAI
errTuan V. Vu; Le T. Hoa; Huynh V. Phuc; A. I. Kartamyshev; Nguyen N. Hieu; Vo T. T. Vi
err分享
err收藏
Unveiling the phonon scattering limited intrinsic carrier mobility and electronic; mechanical; and piezoelectric properties of novel Janus CrBZS2 (Z = N; P; As) monolayers
errJournal of Physics D: Applied Physics
IF3.2
err2026-02-03
err0
PREAI
errLe V Hung; Nguyen N Hieu; Le T T Phuong; A I Kartamyshev; Huynh V Phuc; Tuan V Vu
err分享
err收藏
Role of electron–phonon coupling in charge transport of Janus WBN X2 ( X= S, Se, Te) monolayers: A first-principles analysis电子-声子耦合在Janus WBN X2 ( X = S，Se，Te) 单层电荷传输中的作用: 第一性原理分析
errphysica e: low-dimensional systems and nanostructures
IF0
err2026-01-08
err0
PREAI
errTuan V. Vu; Vo T.T. Vi; A.I. Kartamyshev; Huynh V. Phuc; Nguyen T. Hiep; Nguyen N. Hieu
err分享
err收藏
Intra-and inter-band optical absorption in spherical quantum dots under inversely quadratic Hellmann potential球形量子点中带内和带间光吸收在逆二次Hellmann势下的研究
errPHYSICS LETTERS A
IF2.6
err2025-12-01
err0
PREAI
errPhong, Tran C.; Bich, Tran N.; Phuc, Huynh V.
err分享
err收藏
Optical absorption coefficient in quantum dot with Kratzer potential
errLASER PHYSICS
IF1.1
err2025-11-01
err0
PREAI
errBich, Tran N.; Hoa, Le T.; Phuc, Huynh, V
err分享
err收藏
Electron–Phonon Scattering Dominated Intrinsic Mobility in Janus MBNS2 (M = Ti; Zr; Hf) Monolayers电子-声子散射主导的本征迁移率在Janus MBNS2 (M = Ti; Zr; Hf) 单层材料中
errThe Journal of Physical Chemistry C
IF3.2
err2025-10-27
err0
PREAI
errTuan V. Vu; Le V. Hung; Le T. T. Phuong; Huynh V. Phuc; Chuong V. Nguyen; Andrey I. Kartamyshev; Nguyen N. Hieu
err分享
err收藏
Two-dimensional TaS2 as a contact material for MXene Sc2CF2 semiconductors: a first-principles study二维TaS2作为MXene Sc2CF2半导体的接触材料：第一性原理研究
errRSC Adv.
IF0
err2025-10-20
err0
errOAAI
errTuan V. Vu; Phan T. T. Huyen; Nguyen N. Hieu; Huynh V. Phuc; Chuong V. Nguyen
err分享
err收藏
Magnetic transport properties of topological Dirac semimetal slabs拓扑狄拉克半金属板的磁输运性质
errJOURNAL OF PHYSICS-CONDENSED MATTER
IF2.6
err2025-09-08
err0
PREAI
errHieu, Nguyen N.; Hoa, Le T.; Bich, Tran N.; Kubakaddi, S. S.; Phuc, Huynh, V
err分享
err收藏
Electronic properties and interfacial engineering of metal–semiconductor 1T-; 2H-Ta2B MBene/Janus MoSSe heterostructures金属-半导体1T-/2H-Ta2B MBene/单层MoSSe异质结构的电子性质与界面工程
errNanoscale
IF5.1
err2025-07-27
err0
PREAI
errPham T. Truong; Nguyen N. Hieu; Hieu V. Nguyen; Cuong Q. Nguyen; Tran P. T. Linh; Huynh V. Phuc; Chuong V. Nguyen
err分享
err收藏
Interplay of Floquet engineering and magnetic quantization in topological insulator thin films拓扑绝缘体薄膜中Floquet工程与磁量子化的相互作用
errphysica b condensed matter
IF0
err2025-07-17
err0
PREAI
errHuynh V. Phuc; Kieu-My Bui; Mai H. Phuc; Nguyen V. Hieu
err分享
err收藏
Magneto-optical absorption properties of silicene: Equations of motion method硅烯的磁光吸收特性：运动方程方法
errPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
IF2.9
err2025-07-01
err0
PREAI
errHieu, Nguyen N.; Thu, Vo T. Anh; Tien, Dao T.; Tam, Nguyen T.; Phuc, Huynh V.
err分享
err收藏
Electric field-driven the electronic properties and contact behavior of the metal/semiconductor NbS2/Sc2CF2 heterostructure
errDALTON TRANSACTIONS
IF3.3
err2025-04-01
err0
PREAI
errTran, Thi Nhan; Truong, Pham T.; Phuc, Huynh V.; Hieu, Nguyen N.; Phung, Viet Bac Thi; Nguyen, Chuong V.
err分享
err收藏
High stability Janus structures of two dimensional Fe3GeTe2 monolayer by first-principles investigations
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-02-01
err0
PREAI
errHiep, Nguyen T.; Khan, Dinh T.; Thao, Le T. P.; Nguyen, Cuong Q.; Hoi, Bui D.; Phuc, Huynh V.; Hieu, Nguyen N.
err分享
err收藏
Raman activity and high electron mobility of piezoelectric semiconductor GaSiX2 (X = N, P, and As) toward flexible nanoelectronic devices
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2025-01-13
err0
PREAI
errVu, Tuan V.; Hiep, Nguyen T.; Vi, Vo T. T.; Phuc, Huynh, V; Kartamyshev, A., I; Hieu, Nguyen N.
err分享
err收藏
Raman response, piezoelectricity, and transport properties of the two-dimensional Janus HfSiX3H (X = N/P/As) semiconductors: A first-principles study
errPHYSICAL REVIEW B
IF3.7
err2024-12-02
err1
PREAI
errVu, Tuan V.; Hiep, Nguyen T.; Phuc, Huynh V.; Hoi, Bui D.; Kartamyshev, A. I.; Hieu, Nguyen N.
err分享
err收藏
Unveiling Versatile Electronic Properties and Contact Features of Metal-Semiconductor Graphene/γ-Ge2SSe van der Waals Heterostructures
errLANGMUIR
IF3.9
err2024-09-23
err0
PREAI
errVu, Tuan V.; Kartamyshev, Andrey I.; Ho, Thi H.; Hieu, Nguyen N.; Phuc, Huynh V.; Nguyen, Son-Tung; Nguyen, Chuong V.
err分享
err收藏
Janus piezoelectric ZrSiZ3H (Z = N, P, As) semiconductors with Raman response and high carrier mobility by a first-principles investigation
errSURFACES AND INTERFACES
IF6.3
err2024-09-01
err0
PREAI
errVu, Tuan V.; Hiep, Nguyen T.; Phuc, Huynh V.; Hoi, Bui D.; Linh, Tran P. T.; Kartamyshev, A. I.; Hieu, Nguyen N.
err分享
err收藏
Janus TiSiZ3H (Z = N, P, As) monolayers with large out-of-plane piezoelectricity and high electron mobility: first-principles study具有大的平面外压电性和高电子迁移率的Janus TiSiZ3H (Z = N，P，As) 单层: 第一性原理研究
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2024-06-04
err3
PREAI
errVu, Tuan V.; Bui, Kieu My; Hoang, Khanh, V; Kartamyshev, A., I; Ho, Thi H.; Lavrentyev, A. A.; Anh, Nguyen P. Q.; Phuc, Huynh, V; Hieu, Nguyen N.
err分享
err收藏

研究方向

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合作学者
合作期刊
C
C.A. Duque
H 指数: 54 · 论文数: 551
H
Hamad Rahman Jappor
H 指数: 54 · 论文数: 99
A
A. Bafekry
H 指数: 49 · 论文数: 99
N
Nguyen N. Hieu
H 指数: 47 · 论文数: 345
L
Long Giang Bạch
H 指数: 46 · 论文数: 337
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