Yung C. Liang

National University of Singapore

H指数:30

被引数:3,595

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1700-V Enhancement-Mode MIS-HEMTs With Fully Recessed-Gate on 6-in GaN-on-Si Wafer

1700-V增强型MIS-HEMT器件在6英寸GaN-on-Si晶圆上实现全凹栅结构

IEEE Transactions on Electron Devices

IF3.2

2026-09-070

PRE

High Threshold Voltage E-Mode MIS-HEMTs on 6-in GaN-on-Si: Fully Recessed Gate With N₂/O₂ Plasma Treatment

6英寸Si上GaN MIS-HEMT的高阈值电压E-模式器件：采用N<sub>2</sub>/O<sub>2</sub>等离子体处理的完全凹槽栅极

IEEE Transactions on Electron Devices

IF3.2

2026-07-070

PRE

From Trimers to Chains: Growth and Defect Dynamics in Anisotropic Tellurium Films

从三聚体到链：各向异性碲薄膜的生长和缺陷动力学

Journal of the American Chemical Society

IF15.6

2026-04-140

PRE

Self-Powered AlGaN/GaN Photovoltaic-Integrated UV Photodetector: Rapid Response with Persistent Photoconductivity Suppression

自供电AlGaN/GaN光伏集成紫外光电探测器：快速响应与持久光电导抑制

Advanced Electronic Materials

IF5.3

2025-06-090

OAAI

Pt single-atom electrocatalysts at Cu 2 O nanowires for boosting electrochemical sensing toward glucose

Cu 2 O纳米线上的Pt单原子电催化剂可增强对葡萄糖的电化学传感

CHEMICAL ENGINEERING JOURNAL

IF13.2

2024-09-012

PRE

Design of conformal lattice metamaterials for additive manufacturing

用于增材制造的共形晶格超材料设计

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE

IF13.4

2024-06-010

OAAI

Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study

APPLIED PHYSICS LETTERS

IF3.6

2024-05-142

PRE

Modeling and Performance Optimization on GaN Sectorial Split-Cathode Magnetic Sensors

IEEE SENSORS JOURNAL

IF4.5

2023-11-010

PRE

100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

ACS PHOTONICS

IF6.7

2023-04-1213

PRE

High-gain high-sensitivity AlGaN/GaN ultraviolet photodetector with effective mechanism for photocurrent collection

APPLIED PHYSICS LETTERS

IF3.6

2022-08-0917

PRE

Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device

APPLIED PHYSICS LETTERS

IF3.6

2021-04-202

PREAI

High-temperature three-dimensional GaN-based hall sensors for magnetic field detection

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-11-308

PRE

IEEE Access Special Section: Emerging Technologies for Energy Internet

IEEE ACCESS

IF3.6

2020-01-010

OAAI

Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2019-12-234

PREAI

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

MICROMACHINES

IF3

2019-12-056

OAAI

Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters

IEEE ACCESS

IF3.6

2019-01-0132

OAAI

Electrohydrodynamic printing process monitoring by microscopic image identification

INTERNATIONAL JOURNAL OF BIOPRINTING

IF6

2018-12-1418

OAAI

Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-08-0216

PREAI

The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

APPLIED PHYSICS LETTERS

IF3.6

2016-06-099

PREAI

An Inductive Power Transfer System With a High-Q Resonant Tank for Mobile Device Charging

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2015-11-0166

PREAI

Yung C. Liang

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