Liang He

China Electronic Product Reliability and Environmental Testing Research Institute

H指数:14

被引数:464

个人简介

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Monolithic All-GaN Overtemperature Protection IC Based on GaN-on-Si Technology

基于GaN-on-Si技术的单片全GaN过温保护集成电路

IEEE Sensors Journal

IF4.5

2026-07-130

PRE

The Load-Dump Stress-Induced Degradation of p-GaN HEMT Under Different Gate Biases

不同栅极偏置下p-gan HEMT的卸载应力诱导退化

IEEE TRANSACTIONS ON ELECTRON DEVICES

IF3.2

2025-12-010

PRE

Loosely-coupled Conjugate Heat Transfer analysis of transient wall condensation

松散耦合的共轭传热分析瞬态壁面冷凝

International Journal of Thermal Sciences

IF5

2025-11-250

OAAI

Time-dependent monotonic and non-monotonic dynamic RDS; ON variations and mechanisms in p-GaN Gate HEMTs

时间相关的单调与非单调动态RDS；p-GaN栅极HEMT的导通（ON）变化及机理

Journal of Physics D: Applied Physics

IF3.2

2025-09-250

PRE

Characteristics of 3D-Integrated GaN Power Module Under Multi Heat Source Coupling

MATERIALS

IF3.2

2025-02-280

OAAI

Temperature Sensitivity of Vertical Ga2O3 Junction Barrier Schottky Diode Using the p-NiO/n-Ga2O3 Heterojunction

使用p-nio/n-Ga2O3异质结的垂直Ga2O3结势垒肖特基二极管的温度敏感性

IEEE SENSORS JOURNAL

IF4.5

2025-01-010

PRE

Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs

氢中毒对p栅AlGaN/GaN hemt的影响

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-07-170

PRE

Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

APPLIED PHYSICS LETTERS

IF3.6

2024-04-223

PRE

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

MICROMACHINES

IF3

2024-01-241

OAAI

Quasi-vertical GaN merged PN Schottky diode by using the p-NiO/n-GaN heterojunction

VACUUM

IF3.9

2023-05-016

PRE

Plasma Nitriding of Inner Surface of Slender Tubes using Small Diameter Helicon Plasma

MATERIALS

IF3.2

2022-12-291

OAAI

Quasi-vertical diamond temperature sensor by using Schottky-pn junction structure diode

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-12-0110

PRE

Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs

通过比较等离子体蚀刻和再生长的凹陷栅极Al2O3/GaN mos-fet，将器件行为与MOS界面处的半导体晶格损伤相关联

APPLIED SURFACE SCIENCE

IF6.9

2021-04-0112

PREAI

Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure

具有区域选择性沉积p-nio保护环终端结构的垂直GaN肖特基势垒二极管

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2021-03-0111

PREAI

Impact of dislocation pits on device performances and interface quality degradation for E-mode recessed-gate Al2O3/GaN MOSFETs

位错坑对E型凹陷栅Al2O3/GaN mosfet器件性能和界面质量退化的影响

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2021-02-018

PREAI

Fast and slow interface traps in transparent NiO gated AlGaN/GaN heterostructure field-effect transistors

APPLIED SURFACE SCIENCE

IF6.9

2019-05-0124

PREAI

Dependence of carbon doping concentration on the strain-state and properties of GaN grown on Si substrate

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-08-0115

PREAI

Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2017-12-0119

PREAI

The ESD Robustness of Schottky-Gate p-GaN HEMT Under Different States

不同状态下Schottky-栅 <italic>p</italic>-GaN HEMT的ESD抗扰度

IEEE Transactions on Electron Devices

IF3.2

PRE

Liang He

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