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T

Taizoh Sadoh

kyushu university

H指数:31

被引数:3,178

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Preface: Special issue on control of semiconductor interfaces and group-IV semiconductor engineering technologies (ISCSI-X & ICSI/ISTDM 2025)

半导体界面控制与IV族半导体工程技术特刊前言（ISCSI-X & ICSI/ISTDM 2025）

Materials Science in Semiconductor Processing

IF4.6

2026-03-210

PRE

Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-10-013

PRE

Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-06-011

PRE

Preface: Special issue on control of semiconductor interfaces (ISCSI-IX)

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-05-010

PRE

Layer-exchange crystallization for low-temperature (∼450°C) formation of n-type tensile-strained Ge on insulator

APPLIED PHYSICS LETTERS

IF3.6

2020-10-266

OAAI

Enhanced mobility of Sn-doped Ge thin-films (≤50nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallization

APPLIED PHYSICS LETTERS

IF3.6

2019-07-2317

OAAI

RETRACTION: Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s) (Retraction of Vol 112, art no 242103, 2018)

APPLIED PHYSICS LETTERS

IF3.6

2018-07-110

OAAI

RETRACTED: Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s) (Retracted Article)

APPLIED PHYSICS LETTERS

IF3.6

2018-06-117

PREAI

Large single-crystal Ge-on-insulator by thermally-assisted(∼400 °C) Si seeded-pulse-laser annealing

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-11-012

PREAI

High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

APPLIED PHYSICS LETTERS

IF3.6

2016-12-0648

PREAI

Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

APPLIED PHYSICS LETTERS

IF3.6

2016-07-0122

PREAI

Low-temperature (∼180 ° C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

APPLIED PHYSICS LETTERS

IF3.6

2015-12-2918

PREAI

Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding

APPLIED PHYSICS LETTERS

IF3.6

2014-11-2033

PREAI

Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

APPLIED PHYSICS LETTERS

IF3.6

2014-09-1010

PREAI

High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

APPLIED PHYSICS LETTERS

IF3.6

2014-06-2668

PREAI

The Effects of Annealing Temperatures on Composition and Strain in SixGe1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

IF3.2

2014-02-246

OAAI

Crystallization of Electrodeposited Germanium Thin Film on Silicon (100)

IF3.2

2013-11-0613

OAAI

Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °C)

APPLIED PHYSICS LETTERS

IF3.6

2013-08-1966

PREAI

High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth

APPLIED PHYSICS LETTERS

IF3.6

2013-03-0420

PREAI

Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth

APPLIED PHYSICS LETTERS

IF3.6

2012-12-1029

OAAI