Kaoru Toko

university of tsukuba

H指数:39

被引数:6,047

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Photoresponsivity of polycrystalline Ge layers on glass via sequential solid-phase and grain-templated growth

玻璃上多晶Ge层通过顺序固相生长和晶粒模板法制备的光响应性

MATERIALS & DESIGN

IF7.9

2026-05-230

OAAI

Record-high power factors in low-temperature polycrystalline Ge for flexible thermoelectric generators

低温多晶Ge中创纪录的高功率因子柔性热电发电机

Journal of Materiomics

IF9.6

2026-03-210

OAAI

Formation of low work function metal layers for BaSi2 solar cell applications

用于BaSi2太阳能电池应用的低功函数金属层的形成

Materials Science in Semiconductor Processing

IF4.6

2026-03-070

PRE

Interface engineering with Au nanoparticles for stable and high-capacity Si thin-film anodes

采用Au纳米颗粒的界面工程，用于稳定且高容量的Si薄膜负极

APL Energy

IF0

2026-03-011

PRE

High-rate capability of III–V anodes enabled by machine-learning-guided compositional design

通过机器学习引导的组分设计实现的III–V阳极的高速率性能

Journal of Energy Storage

IF9.8

2026-02-230

OAAI

Demonstration of CMOS inverter on poly-crystalline Ge on glass

在玻璃衬底上多晶Ge CMOS反相器的演示

Materials Science in Semiconductor Processing

IF4.6

2026-02-090

OAAI

Effects of metal substrate types on Li-ion battery anode properties of Si thin films

金属基板类型对Si薄膜锂离子电池阳极性能的影响

Discover Materials

IF5.1

2025-12-220

OAAI

Mitigation of mechanical degradation in silicon thin-film anodes via delithiation cut-off voltage control

通过脱锂截止电压控制减轻硅薄膜阳极的机械退化

Mater. Adv.

IF0

2025-12-170

OAAI

Fabrication of high-photoresponsivity BaSi2 films by sputtering and photogenerated carrier separation in BaSi2/n+-Si heterojunction diodes with n+-Si as electron transport layers

采用溅射法制备高光响应度BaSi2薄膜，并通过BaSi2/n+-Si异质结二极管中的光生载流子分离（以n+-Si作为电子传输层）。

Japanese Journal of Applied Physics

IF1.8

2025-12-010

PRE

Photogenerated carrier separation by built-in potential in sputter-deposited MoOx/BaSi2 heterojunction diodes with MoOx as hole transport layers

Japanese Journal of Applied Physics

IF1.8

2025-11-010

PRE

Evaluation of fundamental properties and hole transport characteristics of 3,3′-Bi [1,4] benzoxazino [2,3,4-kl] phenoxazine (HN-D2) thin films for BaSi2 solar cell applications

Japanese Journal of Applied Physics

IF1.8

2025-11-010

PRE

Investigation of hole transport layer and electron transport layer materials by simulation for BaSi2 heterojunction solar cells

Japanese Journal of Applied Physics

IF1.8

2025-11-010

PRE

First-principles study on the dissociation of As2 on BaSi2 (100) surface

第一性原理研究As2在BaSi2 (100)表面的解离

JAPANESE JOURNAL OF APPLIED PHYSICS

IF1.8

2025-10-010

PRE

First-principles insights into the incorporation of arsenic in BaSi2 thin films grown by molecular beam epitaxy

第一性原理研究分子束外延生长BaSi2薄膜中砷的掺入

Applied Surface Science

IF6.9

2025-07-210

PRE

Hydrogen passivation effects on polycrystalline germanium thin films

多晶锗薄膜的氢钝化效应

NPG Asia Materials

IF8.3

2025-06-170

OAAI

Ba2AgSi3 Thin Films: Growth, Thermoelectric Properties, and Control of Their Conductivity Type via Impurity Doping Using First-Principles Calculations

Ba2AgSi3薄膜：生长、热电性质及通过杂质掺杂控制其导电类型的第一性原理计算

ACS APPLIED ENERGY MATERIALS

IF5.5

2025-05-060

PRE

High-Mobility p-Channel Thin-Film Transistors Based on Polycrystalline GeSn

基于多晶GeSn的高迁移率p沟道薄膜晶体管

ADVANCED ELECTRONIC MATERIALS

IF5.3

2025-04-010

OAAI

High-quality multilayer graphene on insulators via metal catalyst alloying in layer exchange with Bayesian optimization

通过金属催化剂合金化在层交换中采用贝叶斯优化的绝缘体上高质量多层石墨烯

CRYSTENGCOMM

IF2.6

2025-01-010

PRE

Effects of annealing conditions on the battery anode properties of multilayer graphene due to layer exchange

退火条件对多层石墨烯层交换电池负极性能的影响

ENERGY ADVANCES

IF4.3

2025-01-010

PRE

Formation of High-Photoresponsivity BaSi2 Films by Radio-Frequency Sputtering and Evaluation of a BaSi2/TiN/Glass Heterojunction by Transmission Electron Microscopy

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-09-200

PRE

Kaoru Toko

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