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R

Ryo Matsumura

national institute for materials science

H指数:12

被引数:535

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The multi-state photoluminescence and anisotropic properties of Al-catalyzed grown spherulite-like GeS thin films

Al催化生长的球粒状GeS薄膜的多态光致发光和各向异性特性

Materials Science in Semiconductor Processing

IF4.6

2026-10-120

PRE

Nonequilibrium Dopant Activation and Emission Wavelength Modulation in Heavily Sb-Doped Ge(Si) Thin Films by High-Speed Continuous-Wave Laser Annealing

非平衡掺杂激活和发射波长调制：通过高速连续波激光退火在重Sb掺杂Ge(Si)薄膜中的应用

ACS Applied Electronic Materials

IF4.7

2026-01-010

OA

Aluminum-Catalyzed Lateral Growth of Spherulite-like GeS Thin Films on Insulating Substrates Using Vapor Transport: Implications for Electro-optic Applications

使用气相输运法制备绝缘衬底上铝催化球粒状GeS薄膜的侧向生长：对电光应用的启示

ACS APPLIED NANO MATERIALS

IF5.5

2025-05-190

PRE

High Doping Activation (≥1020 cm-3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-06-030

PRE

Synthesis of submillimeter-scale laterally-grown germanium monosulfide thin films and their electro-optic applications

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2024-01-010

PRE

Direct Detection of Free H2 Outgassing in Blisters Formed in Al2O3 Atomic Layers Deposited on Si and Methods of Its Prevention

直接检测沉积在Si上的Al2O3原子层中形成的水泡中的游离H2脱气及其预防方法

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-12-274

PREAI

Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2021-11-013

OAAI

Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films

CRYSTAL GROWTH & DESIGN

IF3.4

2021-10-193

PREAI

Fe-induced layer exchange of multilayer graphene for rechargeable battery anodes

APPLIED PHYSICS EXPRESS

IF2.2

2020-01-086

OAAI

Au-Sn Catalyzed Growth of Ge1-xSnx Nanowires: Growth Direction, Crystallinity, and Sn Incorporation

IF9.1

2019-08-2523

PREAI

Hollow titanosilicate nanospheres encapsulating PdAu alloy nanoparticles as reusable high-performance catalysts for a H2O2-mediated one-pot oxidation reaction

JOURNAL OF MATERIALS CHEMISTRY A

IF9.5

2019-01-0120

PREAI

High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

APPLIED PHYSICS LETTERS

IF3.6

2016-12-0648

PREAI

Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

APPLIED PHYSICS LETTERS

IF3.6

2016-07-0122

PREAI

Low-temperature (∼180 ° C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

APPLIED PHYSICS LETTERS

IF3.6

2015-12-2918

PREAI

Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding

APPLIED PHYSICS LETTERS

IF3.6

2014-11-2033

PREAI

Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

APPLIED PHYSICS LETTERS

IF3.6

2014-09-1010

PREAI

The Effects of Annealing Temperatures on Composition and Strain in SixGe1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

IF3.2

2014-02-246

OAAI

Crystallization of Electrodeposited Germanium Thin Film on Silicon (100)

IF3.2

2013-11-0613

OAAI

High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth

APPLIED PHYSICS LETTERS

IF3.6

2013-03-0420

PREAI

Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth

APPLIED PHYSICS LETTERS

IF3.6

2012-12-1029

OAAI