Dominique Planson - Publications, H-index & Citations

Dominique Planson

universite grenoble alpes (uga)

18H指数

343论文数

1.8K被引数

收录论文 12

发表时间

New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations 通过拉曼光谱、阴极发光和电学特性表征获得的垂直GaN-on-GaN肖特基二极管的新见解

Materials Science in Semiconductor Processing

IF4.6

2025-06-05

OAAI

Vishwajeet Maurya; Daniel Alquier; Maroun Dagher; Camille Sonneville; Dominique Planson; Hala El Rammouz; Thomas Kaltsounis; Eric Frayssinet; Yvon Cordier; Nevine Rochat; Matthew Charles; Julien Buckley

A Novel Isolation Approach for GaN-Based Power Integrated Devices

MICROMACHINES

IF3

2024-09-30

OAAI

Zaidan, Zahraa; Al Taradeh, Nedal; Benjelloun, Mohammed; Rodriguez, Christophe; Soltani, Ali; Tasselli, Josiane; Isoird, Karine; Phung, Luong Viet; Sonneville, Camille; Planson, Dominique; Cordier, Yvon; Morancho, Frederic; Maher, Hassan

Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-01

PREAI

Planson, Dominique; Tournier, Dominique; Sonneville, Camille; Bevilacqua, Pascal; Phung, Luong Viet; Morel, Herve

Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-05-01

OAAI

Planson, Dominique; Asllani, Besar; Luong-Viet Phung; Bevilacqua, Pascal; Hamad, Hassan; Raynaud, Christophe

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

APPLIED PHYSICS LETTERS

IF3.6

2014-02-24

OAAI

Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Vergne, B.; Planson, D.

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

APPLIED PHYSICS LETTERS

IF3.6

2013-05-31

OAAI

Thierry-Jebali, N.; Vo-Ha, A.; Carole, D.; Lazar, M.; Ferro, G.; Planson, D.; Henry, A.; Brosselard, P.

State of the art of high temperature power electronics

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2011-03-01

320

OAAI

Buttay, Cyril; Planson, Dominique; Allard, Bruno; Bergogne, Dominique; Bevilacqua, Pascal; Joubert, Charles; Lazar, Mihai; Martin, Christian; Morel, Herve; Tournier, Dominique; Raynaud, Christophe

Extreme dielectric strength in boron doped homoepitaxial diamond

APPLIED PHYSICS LETTERS

IF3.6

2010-11-29

145

OAAI

Volpe, Pierre-Nicolas; Muret, Pierre; Pernot, Julien; Omnes, Franck; Teraji, Tokuyuki; Koide, Yasuo; Jomard, Francois; Planson, Dominique; Brosselard, Pierre; Dheilly, Nicolas; Vergne, Bertrand; Scharnholz, Sigo

Ni-Al ohmic contact to p-type 4H-SiC

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2006-10-01

OAAI

Vang, H.; Lazar, M.; Brosselard, P.; Raynaud, C.; Cremillieu, P.; Leclercq, J. -L.; Bluet, J. -M.; Scharnholz, S.; Planson, D.

A 4H-SiC high-power-density VJFET as controlled current limiter

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

IF4.5

2003-09-01

OAAI

Tournier, D; Godignon, P; Montserrat, J; Planson, D; Raynaud, C; Chante, JP; de Palma, JF; Sarrus, F