arrow
返回
M

Mattia Boniardi

micron technology inc

16H指数
32论文数
851被引数
收录论文 7
发表时间
Write disturb model for 3D XPointTM array3D XPointTM阵列的写入干扰模型
err2026-09-22
err0
PREAI
errLuca Laurin; Mattia Boniardi; Innocenzo Tortorelli; Andrea Ghetti; Enrico Varesi; Hongqi Li; Christina Papagianni; Bob Gleixner; Hongmei Wang; Anna Maria Conti; Augusto Benvenuti; Paolo Fantini; Fabio Pellizzer
err分享
err收藏
Editorial: Fundamentals of phase-change materials: Synthesis, characterization, devices and modeling
err2022-02-01
err1
PREAI
errBoniardi, Mattia; Mio, Antonio Massimiliano; Zhang, Wei; Impellizzeri, Giuliana
err分享
err收藏
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis
err2017-07-01
err11
PREAI
errD'Arrigo, G.; Mio, A. M.; Boniardi, M.; Redaelli, A.; Varesi, E.; Privitera, S.; Pellegrino, G.; Spinella, C.; Rimini, E.
err分享
err收藏
Bipolar switching in chalcogenide phase change memory
err2016-07-05
err67
errOAAI
errCiocchini, N.; Laudato, M.; Boniardi, M.; Varesi, E.; Fantini, P.; Lacaita, A. L.; Ielmini, D.
err分享
err收藏
Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy
err2015-01-15
err18
PREAI
errBoschker, Jos E.; Boniardi, Mattia; Redaelli, Andrea; Riechert, Henning; Calarco, Raffaella
err分享
err收藏