Yukinori Morita - Publications, H-index & Citations

Yukinori Morita

national institute of advanced industrial science and technology

28H指数

343论文数

3.3K被引数

收录论文 26

发表时间

Enhancement-Mode Operation and Stability Improvement in Ultrathin ALD-InO $_{\textit{x}}$ FETs With AlO $_{\textit{x}}$ /HfO $_{\textit{x}}$ Gate Dielectric

IEEE Transactions on Electron Devices

IF3.2

2026-01-05

PREAI

Chia-Tsong Chen; Kasidit Toprasertpong; Toshifumi Irisawa; Wen Hsin Chang; Shinji Migita; Yukinori Morita; Hiroyuki Ota; Tatsuro Maeda

SiO2/Si interface defects in HKMG stack fabrication

SURFACES AND INTERFACES

IF6.3

2025-01-01

PREAI

Nunomura, Shota; Morita, Yukinori

Systematic characterization of nanoscale h-BN quantum sensor spots created by helium-ion microscopy

PHYSICAL REVIEW APPLIED

IF4.4

2024-11-12

PREAI

Gu, Hao; Tsukamoto, Moeta; Nakamura, Yuki; Nakaharai, Shu; Iwasaki, Takuya; Watanabe, Kenji; Taniguchi, Takashi; Ogawa, Shinichi; Morita, Yukinori; Sasaki, Kento; Kobayashi, Kensuke

Magnetic field imaging by hBN quantum sensor nanoarray

APPLIED PHYSICS LETTERS

IF3.6

2023-06-13

OAAI

Sasaki, Kento; Nakamura, Yuki; Gu, Hao; Tsukamoto, Moeta; Nakaharai, Shu; Iwasaki, Takuya; Watanabe, Kenji; Taniguchi, Takashi; Ogawa, Shinichi; Morita, Yukinori; Kobayashi, Kensuke

Wake-up-free properties and high fatigue resistance of HfxZr1-xO2-based metal-ferroelectric-semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)

APL MATERIALS

IF4.5

2022-05-16

OAAI

Onaya, Takashi; Nabatame, Toshihide; Inoue, Mari; Sawada, Tomomi; Ota, Hiroyuki; Morita, Yukinori

Investigation of the wake-up process and time-dependent imprint of Hf0.5Zr0.5O2 film through the direct piezoelectric response

APPLIED PHYSICS LETTERS

IF3.6

2021-07-20

PREAI

Takada, Kenshi; Murase, Mikio; Migita, Shinji; Morita, Yukinori; Ota, Hiroyuki; Fujimura, Norifumi; Yoshimura, Takeshi

Ultra-Low Power Human Proximity Sensor Using Electrostatic Induction 使用静电感应的超低功耗人体接近传感器

IEEE SENSORS JOURNAL

IF4.5

2020-07-15

PREAI

Fuketa, Hiroshi; Morita, Yukinori

Conductance Tunable Suspended Graphene Nanomesh by Helium Ion Beam Milling 氦离子束研磨电导可调悬浮石墨烯纳米网

MICROMACHINES

IF3

2020-04-07

OAAI

Liu, Fayong; Wang, Zhongwang; Nakanao, Soya; Ogawa, Shinichi; Morita, Yukinori; Schmidt, Marek; Haque, Mayeesha; Muruganathan, Manoharan; Mizuta, Hiroshi

Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering 直流磁控溅射法在Si (001) 上外延生长Ge薄膜

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-11-01

PREAI

Otsuka, Shintaro; Mori, Takahiro; Morita, Yukinori; Uchida, Noriyuki; Liu, Yongxun; O'uchi, Shin-ichi; Fuketa, Hiroshi; Migita, Shinji; Masahara, Meishoku; Matsukawa, Takashi

Raman spectroscopy of ultrathin strained-silicon-on-insulator: Size effects in strain, elastic, and phonon properties

APPLIED PHYSICS LETTERS

IF3.6

2015-03-03

PREAI

Poborchii, Vladimir; Hara, Mikiya; Morita, Yukinori; Tada, Tetsuya

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

APPLIED PHYSICS LETTERS

IF3.6

2015-02-23

PREAI

Mori, Takahiro; Morita, Yukinori; Miyata, Noriyuki; Migita, Shinji; Fukuda, Koichi; Mizubayashi, Wataru; Masahara, Meishoku; Yasuda, Tetsuji; Ota, Hiroyuki

Ultraviolet Raman spectra of few nanometer thick silicon-on-insulator nanofilms: Lifetime reduction of confined phonons

APPLIED PHYSICS LETTERS

IF3.6

2014-10-16

PREAI

Poborchii, Vladimir; Morita, Yukinori; Ishimaru, Manabu; Tada, Tetsuya

Ultraviolet Raman spectra of single uncoated and SiO2-coated silicon-on-insulator nanowires: Phonon boundary scattering, wave-vector relaxation and stress

APPLIED PHYSICS LETTERS

IF3.6

2013-10-10

PREAI

Poborchii, Vladimir; Tada, Tetsuya; Morita, Yukinori; Kanayama, Toshihiko

Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

APPLIED PHYSICS LETTERS

IF3.6

2013-04-24

PREAI

Matsukawa, T.; Liu, Y. X.; Mizubayashi, W.; Tsukada, J.; Yamauchi, H.; Endo, K.; Ishikawa, Y.; O'uchi, S.; Ota, H.; Migita, S.; Morita, Y.; Masahara, M.

Simultaneous flattening of Si(110), (111), and (001) surfaces for three-dimensional Si nanowires

APPLIED PHYSICS LETTERS

IF3.6

2012-06-25

OAAI

Morita, Yukinori; Ota, Hiroyuki

High near-ultraviolet Raman efficiency of silicon nanowires with small cross sections

PHYSICAL REVIEW B

IF3.7

2011-04-21

PREAI

Poborchii, Vladimir; Tada, Tetsuya; Morita, Yukinori; Kanayama, Toshihiko; Geshev, Pavel I.

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k/SiO2 interface

APPLIED PHYSICS LETTERS

IF3.6

2008-04-01

153

PREAI

Iwamoto, Kunihiko; Kamimuta, Yuuichi; Ogawa, Arito; Watanabe, Yukimune; Migita, Shinji; Mizubayashi, Wataru; Morita, Yukinori; Takahashi, Masashi; Ota, Hiroyuki; Nabatame, Toshihide; Toriumi, Akira

Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures

APPLIED PHYSICS LETTERS

IF3.6

2007-02-16

PREAI

Maeda, Tatsuro; Nishizawa, Masayasu; Morita, Yukinori; Takagi, Shinichi

Hole doping and superconductivity characteristics of the s=1, 2 and 3 members of the (Cu,Mo)-12s2 homologous series of layered copper oxides 层状氧化铜 (Cu，Mo)-12s2同系s = 1、2和3成员的空穴掺杂和超导特性

JOURNAL OF SOLID STATE CHEMISTRY

IF3.5

2005-11-01

PREAI

Karppinen, M; Morita, Y; Kobayashi, T; Grigoraviciute, I; Chen, JM; Liu, RS; Yamauchi, H