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Per‐Erik Hellström

kth royal institute of technology

19H指数
146论文数
1.0K被引数
收录论文 9
发表时间
Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection
err2020-09-15
err6
errOAAI
errVallejo-Perez, Monica; Ternon, Celine; Spinelli, Nicolas; Morisot, Fanny; Theodorou, Christoforos; Jayakumar, Ganesh; Hellstrom, Per-Erik; Mouis, Mireille; Rapenne, Laetitia; Mescot, Xavier; Salem, Bassem; Stambouli, Valerie
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High-Deposition-Rate Atomic Layer Deposition of Thulium Oxide from TmCp3 and H2O
err2013-09-27
err19
PREAI
errLitta, Eugenio Dentoni; Hellstrom, Per-Erik; Henkel, Christoph; Valerio, Sven; Hallen, Anders; Ostling, Mikael
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Reduced self-heating by strained silicon substrate engineering
err2008-07-01
err26
PREAI
errO'Neill, A.; Agaiby, R.; Olsen, S.; Yang, Y.; Hellstrom, P. -E.; Ostling, M.; Oehme, M.; Lyutovich, K.; Kasper, E.; Eneman, G.; Verheyen, P.; Loo, R.; Claeys, C.; Fiegna, C.; Sangiorgi, E.
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Ni2Si nanowires of extraordinarily low resistivity
err2006-05-23
err12
PREAI
errZhang, Z.; Lu, J.; Hellstrom, P.-E.; Ostling, M.; Zhang, S.-L.
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Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator -: art. no. 253507
err2005-06-16
err32
PREAI
errSeger, J; Hellström, PE; Lu, J; Malm, BG; von Haartman, M; Ostling, M; Zhang, SL
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pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions
err2005-02-01
err3
PREAI
errIsheden, C; Hellström, PE; von Haartman, M; Radamson, HH; Östling, M
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