Roger Loo - Publications, H-index & Citations

Roger Loo

IMEC

43H指数

921论文数

10.0K被引数

收录论文 82

发表时间

Eight-qubit operation of a 300 mm SiMOS foundry-fabricated device 300毫米SiMOS代工厂制造器件的八量子比特操作

Nature Communications

IF15.7

2026-07-09

OAAI

Andreas Nickl; Nard Dumoulin Stuyck; Paul Steinacker; Jesus D. Cifuentes; Santiago Serrano; MengKe Feng; Ensar Vahapoglu; Fay E. Hudson; Kok Wai Chan; Stefan Kubicek; Julien Jussot; Yann Canvel; Sofie Beyne; Yosuke Shimura; Roger Loo; Clement Godfrin; Bart Raes; Sylvain Baudot; Danny Wan; Arne Laucht; Chih-Hwan Yang; Wee Han Lim; Andre Saraiva; Christopher C. Escott; Kristiaan De Greve; Andrew S. Dzurak; Tuomo Tanttu

Formation and texture of Y silicides in annealed TiN/Y thin films on Si substrates 退火TiN/Y薄膜中Y硅化物的形成与织构

Materials Science in Semiconductor Processing

IF4.6

2026-07-01

PREAI

Bert Pollefliet; Clement Porret; Alex Merkulov; Roger Loo; Christophe Detavernier; André Vantomme; Clement Merckling

Towards 100 GHz Waveguide Ge/Si Avalanche Photodiodes for High-Speed Optical Interconnects 面向100 GHz波导Ge/Si雪崩光电二极管用于高速光互连

Journal of Lightwave Technology

IF4.8

2026-03-03

PREAI

Amir Shahin; Conor Coughlan; Hakim Kobbi; Mathias Berciano; Didit Yudistira; Roger Loo; Shuchi Kaushik; Patrick Carolan; Marta Agati; Peter Verheyen; Maumita Chakrabarti; Dimitrios Velenis; Yoojin Ban; Filippo Ferraro; Peter Ossieur; Dries Van Thourhout; Joris Van Campenhout

Rapid Autotuning of a SiGe Quantum Dot Into the Single-Electron Regime With Machine Learning and RF-Reflectometry FPGA-Based Measurements 利用机器学习和基于FPGA的射频反射测量技术快速自调谐SiGe量子点进入单电子态

IEEE Transactions on Quantum Engineering

IF4.6

2026-01-01

PREAI

Roux, Marc-Antoine; Rivard, Joffrey; Yon, Victor; Morel, Alexis; Leclerc, Dominic; Rohrbacher, Claude; Ndiaye, El Bachir; Tafuri, Felice Francesco; Bono, Brendan; Kubicek, Stefan; Loo, Roger; Shimura, Yosuke; Jussot, Julien; Godfrin, Clement; Wan, Danny; De Greve, Kristiaan; Tetrault, Marc-Andre; Drouin, Dominique; Lupien, Christian; Pioro-Ladriere, Michel; Dupont-Ferrier, Eva

Growth and stability of Pt germanides on Ge and GeSn substrates Pt germanides在Ge和GeSn基底上的生长与稳定性

Acta Materialia

IF9.3

2025-09-27

PREAI

G. Magchiels; D. Deduytsche; L. Kotsedi; R. Loo; C.B. Mtshali; I.K. Segola; N. Spettel; K. van Stiphout; A. Vohra; C. Detavernier; A. Vantomme

Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity 工业兼容的硅自旋量子比特单元胞超过99%保真度

Nature

IF48.5

2025-09-24

OAAI

Paul Steinacker; Nard Dumoulin Stuyck; Wee Han Lim; Tuomo Tanttu; MengKe Feng; Santiago Serrano; Andreas Nickl; Marco Candido; Jesus D. Cifuentes; Ensar Vahapoglu; Samuel K. Bartee; Fay E. Hudson; Kok Wai Chan; Stefan Kubicek; Julien Jussot; Yann Canvel; Sofie Beyne; Yosuke Shimura; Roger Loo; Clement Godfrin; Bart Raes; Sylvain Baudot; Danny Wan; Arne Laucht; Chih Hwan Yang; Andre Saraiva; Christopher C. Escott; Kristiaan De Greve; Andrew S. Dzurak

Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium 工业级300 mm晶圆，采用天然硅/硅锗材料处理的旋转量子比特

NPJ QUANTUM INFORMATION

IF8.3

2025-04-05

OAAI

Koch, Thomas; Godfrin, Clement; Adam, Viktor; Ferrero, Julian; Schroller, Daniel; Glaeser, Noah; Kubicek, Stefan; Li, Ruoyu; Loo, Roger; Massar, Shana; Simion, George; Wan, Danny; De Greve, Kristiaan; Wernsdorfer, Wolfgang

Preface: Advances in semiconductor materials, technology, and applications

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-11-01

PREAI

Isella, Giovanni; Virgilio, Michele; Loo, Roger; Nakatsuka, Osamu; Capellini, Giovanni

Effects of Strain on Diborane Dissociative Adsorption and Boron Incorporation on Si0.5Ge0.5(001)-2 x 1 Surfaces

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2024-07-17

PREAI

Rengo, Gianluca; Pourtois, Geoffrey; Porret, Clement; Loo, Roger; Vantomme, Andre

Compressively strained epitaxial Ge layers for quantum computing applications

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-05-01

OAAI

Shimura, Yosuke; Godfrin, Clement; Hikavyy, Andriy; Li, Roy; Aguilera, Juan; Katsaros, Georgios; Favia, Paola; Han, Han; Wan, Danny; De Greve, Kristiaan; Loo, Roger

64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform

JOURNAL OF LIGHTWAVE TECHNOLOGY

IF4.8

2024-01-01

PREAI

Kandeel, Ahmed; Hiblot, Gaspard; Porret, Clement; Srinivasan, Srinivasan Ashwyn; Shimura, Yosuke; Loo, Roger; Berciano, Mathias; Tseng, Chih-Kuo Neil; Malik, Dharmander; Milenin, Alexey; Yudistira, Didit; Balakrishnan, Sadhishkumar; Shahin, Amir; Vaskasi, Javad Rahimi; Verheyen, Peter; Pantouvaki, Marianna; Chakrabarti, Maumita; Velenis, Dimitrios; Ferraro, Filippo; Ban, Yoojin; Van Thourhout, Dries; Van Campenhout, Joris

Wafer-scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple-junction solar cells

PROGRESS IN PHOTOVOLTAICS

IF7.6

2022-11-08

PREAI

Depauw, Valerie; Porret, Clement; Moelants, Myriam; Vecchio, Emma; Kennes, Koen; Han, Han; Loo, Roger; Cho, Jinyoun; Courtois, Guillaume; Kurstjens, Rufi; Dessein, Kristof; Orejuela, Victor; Sanchez-Perez, Clara; Rey-Stolle, Ignacio; Garcia, Ivan

Simultaneous Dimensional and Analytical Characterization of Ordered Nanostructures

SMALL

IF12.1

2021-11-25

OAAI

Hoenicke, Philipp; Kayser, Yves; Nikolaev, Konstantin, V; Soltwisch, Victor; Scheerder, Jeroen E.; Fleischmann, Claudia; Siefke, Thomas; Andrle, Anna; Gwalt, Grzegorz; Siewert, Frank; Davis, Jeffrey; Huth, Martin; Veloso, Anabela; Loo, Roger; Skroblin, Dieter; Steinert, Michael; Undisz, Andreas; Rettenmayr, Markus; Beckhoff, Burkhard

Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

APPLIED PHYSICS LETTERS

IF3.6

2018-12-03

OAAI

Gupta, S.; Simoen, E.; Loo, R.; Smets, Q.; Verhulst, A. S.; Lauwaert, J.; Vrielinck, H.; Heyns, M.

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

APPLIED PHYSICS LETTERS

IF3.6

2018-11-07

PREAI

Gupta, S.; Shimura, Y.; Richard, O.; Douhard, B.; Simoen, E.; Bender, H.; Nakatsuka, O.; Zaima, S.; Loo, R.; Heyns, M.

Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

APPLIED PHYSICS LETTERS

IF3.6

2018-10-15

PREAI

Srinivasan, S. A.; Porret, C.; Pantouvaki, M.; Shimura, Y.; Geiregat, P.; Loo, R.; Van Campenhout, J.; Van Thourhout, D.

Electrical properties of extended defects in strain relaxed GeSn 应变松弛GeSn中扩展缺陷的电学性质

APPLIED PHYSICS LETTERS

IF3.6

2018-07-09

OAAI

Gupta, Somya; Simoen, Eddy; Loo, Roger; Shimura, Yosuke; Porret, Clement; Gencarelli, Federica; Paredis, Kristof; Bender, Hugo; Lauwaert, Johan; Vrielinck, Henk; Heyns, Marc

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

NANOSCALE

IF5.1

2018-01-01

OAAI

Schulze, Andreas; Strakos, Libor; Vystavel, Tomas; Loo, Roger; Pacco, Antoine; Collaert, Nadine; Vandervorst, Wilfried; Caymax, Matty

Use of high order precursors for manufacturing gate all around devices 使用高阶前体制造栅极全包围器件

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-11-01

PREAI

Hikavyy, A.; Zyulkov, I.; Mertens, H.; Witters, L.; Loo, R.; Horiguchi, N.