未登录

D

Dong-Soo Shin

hanyang university

H指数:25

被引数:2,167

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

All-InGaN/GaN red light-emitting diodes with low-temperature-grown GaN capping layer

全InGaN/GaN红光发光二极管，具有低温生长的GaN盖帽层

Scientific Reports

IF3.9

2026-09-020

OAAI

Impact of sidewall passivation on reliability in InGaN-based micro-LEDs

侧壁钝化对InGaN基微LED可靠性的影响

Advanced Photonics Nexus

IF6

2026-01-011

PRE

Heater-Tuned Single-Grating Distributed Bragg Reflector Lasers With a Thermal Confinement Waveguide Structure

热调谐单光栅分布式布拉格反射镜激光器，具有热限制波导结构

IEEE JOURNAL OF QUANTUM ELECTRONICS

IF0

2025-10-010

PRE

Monolithic Integration of GaN Thin Film and GaN Nanorods Pixels: Facile Growth of InGaN/GaN Quantum Wells for the Realization of Full Color Micro-LED Display

GaN薄膜与GaN纳米棒像素的单片集成：实现全色微LED显示的InGaN/GaN量子阱的简易生长

ADVANCED OPTICAL MATERIALS

IF7.2

2025-04-180

OA

Enhanced size-dependent efficiency of InGaN/AlGaN near-ultraviolet micro-LEDs

APPLIED PHYSICS LETTERS

IF3.6

2025-01-270

PRE

Temperature-Induced Stress Performance of High-Density GaN Micro-LED Arrays for Industrial Mass Production

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-12-031

PRE

Origin of the High Forward Voltage and Low Voltage Efficiency of GaN-Based Light-Emitting Diodes at Cryogenic Temperatures

IF6.7

2024-01-181

OA

Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells

IF3.3

2023-04-266

OA

Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress

APPLIED PHYSICS LETTERS

IF3.6

2022-07-0610

PRE

Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes

IF3.3

2022-05-269

OA

Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis

SCIENTIFIC REPORTS

IF3.9

2020-10-1513

OAAI

Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization

IF6.6

2018-09-1564

OAAI

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation

IF3.2

2018-05-0722

OAAI

On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2016-07-1834

PREAI

Non-thermal shielding effects on the Compton scattering power in astrophysical plasmas

非热屏蔽对天体等离子体中康普顿散射功率的影响

ASTROPARTICLE PHYSICS

IF2.9

2015-10-012

PREAI

Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2014-11-1335

PREAI

Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements

APPLIED PHYSICS LETTERS

IF3.6

2014-04-1768

PREAI

Spatiotemporal path discontinuities of wavepackets propagating across a meta-atom

SCIENTIFIC REPORTS

IF3.9

2014-04-144

OAAI

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

APPLIED PHYSICS LETTERS

IF3.6

2012-04-10100

PREAI

Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

APPLIED PHYSICS LETTERS

IF3.6

2012-03-27110

PREAI