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Dong-Pyo Han

pukyong national university

H指数:20

被引数:1,201

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The Origin of Efficiency in III-Nitride Micro-Light-Emitting Diodes

III-Nitride微发光二极管效率的起源

Advanced Science

IF14.1

2026-04-020

OAAI

Fabrication and Characterizations of Porous AlGaN Distributed Bragg Reflectors with Excellent Thermal Stability at High Temperature

高温下具有优异热稳定性的多孔AlGaN分布式布拉格反射器的制备与表征

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-05-100

PRE

InGaN-based blue and red micro-LEDs: Impact of carrier localization

APPLIED PHYSICS REVIEWS

IF11.6

2024-12-240

PRE

Accurate Modeling for Small-Signal Response Analysis in GaInN/GaN-Based Micro-Light-Emitting Devices

IF6.7

2024-10-250

PRE

Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer

IF3.2

2023-12-280

OAAI

Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells

IF3.3

2023-04-266

OA

Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro-LEDs

ADVANCED OPTICAL MATERIALS

IF7.2

2023-03-1729

OA

Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs

IF6.6

2022-09-285

OA

Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-05-245

PRE

Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration

APPLIED PHYSICS LETTERS

IF3.6

2022-04-0518

PRE

Space-charge effect on photogenerated-current and -voltage in III-nitride optoelectronic semiconductors

PHOTONICS RESEARCH

IF7.2

2021-08-243

PRE

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

APPLIED PHYSICS LETTERS

IF3.6

2021-01-1115

PREAI

Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation

用于有效表面钝化的多孔荧光SiC的压控阳极氧化

IF4.3

2020-10-213

OAAI

Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis

SCIENTIFIC REPORTS

IF3.9

2020-10-1513

OAAI

Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition

APPLIED SURFACE SCIENCE

IF6.9

2020-04-0121

OAAI

Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires

IF6.6

2019-11-3011

OAAI

Zigzag-shaped quantum well engineering of green light-emitting diode

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2019-08-0124

PREAI

Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires

IF5.1

2019-01-0130

PREAI

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2018-01-0128

PREAI

Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2014-11-1335

PREAI