B. Adamowicz - Publications, H-index & Citations

High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

IF3.6

2017-06-15

OAAI

Matys, M.; Stoklas, R.; Blaho, M.; Adamowicz, B.

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method

IF3.6

2016-08-05

OAAI

Matys, M.; Adamowicz, B.; Zytkiewicz, Z. R.; Taube, A.; Kruszka, R.; Piotrowska, A.

Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement

IF3.6

2013-07-08

OAAI

Matys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T.

Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures

IF3.6

2012-12-06

OAAI

Matys, M.; Adamowicz, B.; Hashizume, T.

Role of interface states and depletion layer in NO2 sensing mechanism of n-InP epitaxial layers

IF6.9

2012-08-01

PREAI

Domanowska, A.; Miczek, M.; Ucka, R.; Matys, M.; Adamowicz, B.; Zywicki, J.; Taube, A.; Korwin-Mikke, K.; Gieraltowska, S.; Sochacki, M.

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2012-07-01

PREAI

Wierzbowska, K.; Adamowicz, B.; Lauron, B.; Bideux, L.

Surface passivation of III-V semiconductors for future CMOS devices-Past research, present status and key issues for future 用于未来CMOS器件的iii-v半导体的表面钝化-过去的研究，现状和未来的关键问题

Surface state density distribution at vacuum-annealed InP(100) surface as derived from the rigorous analysis of photoluminescence efficiency

IF6.9

2010-07-01

PREAI

Hasegawa, H.; Akazawa, M.; Domanowska, A.; Adamowicz, B.

Response to oxygen and chemical properties of SnO2 thin-film gas sensors

IF6.9

2008-10-01

PREAI

Tomkiewicz, P.; Adamowicz, B.; Miczek, M.; Hasegawa, H.; Szuber, J.

A novel III-V semiconductor material for NO2 detection and monitoring

IF3.9

2008-06-01

PREAI

Adamowicz, Boguslawa; Izydorczyk, Weronika; Izydorczyk, Jacek; Klimasek, Andrzej; Jakubik, Wieslaw; Zywicki, Janusz

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2008-03-01

PREAI

Wierzbowska, Katarzyna; Bideux, Luc; Adamowicz, Boguslawa; Pauly, Alain

XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation

Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures

IF6.9

2006-09-01

PREAI

Benamara, Z.; Mecirdi, N.; Bouiadjra, B. Bachir; Bideux, L.; Gruzza, B.; Robert, C.; Miczek, M.; Adamowicz, B.

SOLAR ENERGY

IF6.6

2006-06-01

PREAI

Hasegawa, Hideki; Sato, Taketomo; Kasai, Seiya; Adamowicz, Boguslawa; Hashizume, Tamotsu

Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(100) surfaces 用于表征InP(100) 表面电子特性的光致发光效率的严格分析

Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum

IF3.9

2002-09-01

PREAI

Adamowicz, B; Miczek, M; Arabasz, S; Hasegawa, H

The comparative XPS and PYS studies of SnO2 thin films prepared by L-CVD technique and exposed to oxygen and hydrogen

IF3.9

2001-07-01

PREAI

Miczek, M; Adamowicz, B; Szuber, J; Hasegawa, H

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2000-11-01

PREAI

Szuber, J; Czempik, G; Larciprete, R; Adamowicz, B

Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces

Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum

IF3.9

2000-05-01

PREAI

Adamowicz, B; Hasegawa, H