On the validity and applicability of models of negative capacitance and implications for MOS applicationsAPPLIED PHYSICS LETTERSIF3.62018-07-2440OAAI
Intrinsic electron traps in atomic-layer deposited HfO2 insulatorsAPPLIED PHYSICS LETTERSIF3.62016-05-3146OAAI
Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacksAPPLIED PHYSICS LETTERSIF3.62012-07-2316PREAI
Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memoriesAPPLIED PHYSICS LETTERSIF3.62012-04-0240PREAI
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory deviceAPPLIED PHYSICS LETTERSIF3.62012-03-1650PREAI
A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memoryAPPLIED PHYSICS LETTERSIF3.62012-01-2468PREAI
Study of ohmic contacts to n-type Ge: Snowplow and laser activationAPPLIED PHYSICS LETTERSIF3.62011-12-1336PREAI
Next Generation Access (NGA) supply side interventions-An international comparisonTELECOMMUNICATIONS POLICYIF6.42011-10-0120PRE
Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNxAPPLIED PHYSICS LETTERSIF3.62011-08-1551PREAI
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cellsAPPLIED PHYSICS LETTERSIF3.62011-08-01100OAAI
Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material AspectsJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32011-06-099PREAI
Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitorsAPPLIED PHYSICS LETTERSIF3.62011-05-0227PREAI
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer depositionAPPLIED PHYSICS LETTERSIF3.62011-04-1998OA
Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivationAPPLIED PHYSICS LETTERSIF3.62011-01-0540PREAI
Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodesAPPLIED PHYSICS LETTERSIF3.62010-10-2027PREAI
Strontium niobate high-k dielectrics: Film deposition and material propertiesACTA MATERIALIAIF9.32010-01-018PRE
Atomic Layer Deposition of Strontium Titanate Films Using Sr(tBu3Cp)2 and Ti(OMe)4JOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32010-01-0171PREAI
Properties of Ultrathin High Permittivity (Nb1-xTax)2O5 Films Prepared by Aqueous Chemical Solution DepositionJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32010-01-015PREAI
Dielectric Response of Ta2O5, Nb2O5, and NbTaO5 from First-Principles InvestigationsJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32010-01-0140PREAI
个人简介
教育背景
工作经历
荣誉奖项
未登录.png){kind=icon}
未登录个人简介教育背景工作经历荣誉奖项
研究方向