Tseung-Yuen Tseng

institute of electronics national yang ming chiao tung university

H指数:65

被引数:1.6万

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荣誉奖项

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Metal interdiffusion enhanced WOx/CuOx heterojunction optoelectronic memristive synapses for face recognition application

金属互扩散增强的WOx/CuOx异质结光电忆阻器突触在人脸识别应用中

APL MATERIALS

IF4.5

2025-05-080

Metal free all oxide SnOx/HfOx bilayer transristor synapse for neuromorphic computing

无金属全氧化物SnOx/HfOx双层晶体管突触用于类脑计算

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-03-170

A Violet‐Light‐Responsive ReRAM Based on Zn₂SnO₄/Ga₂O₃ Heterojunction as an Artificial Synapse for Visual Sensory and In‐Memory Computing

一种基于Zn2SnO4/Ga2O3异质结的紫色光响应式ReRAM，作为人工突触用于视觉传感和在内存计算中

Advanced Electronic Materials

IF5.3

2024-10-090

OAAI

All-Optically Regulated ITO/Cu2O/WO3/ITO Memristor for Optoelectronic Neuromorphic Computing

用于光电神经形态计算的全光调节ITO/Cu2O/WO3/ITO忆阻器

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-07-015

Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction

APPLIED PHYSICS LETTERS

IF3.6

2024-03-257

Harnessing a WOx-based flexible transparent memristor synapse with a hafnium oxide layer for neuromorphic computing

NANOSCALE

IF5.1

2024-01-015

PRE

Two-Dimensional (2D) Materials-Inserted Conductive Bridge Random Access Memory: Controllable Injection of Cations in Vertical Stacking Alignment of MoSe2 Layers Prepared by Plasma-Assisted Chemical Vapor Reaction

二维 (2D) 材料-插入的导电桥随机存取存储器: 通过等离子体辅助化学气相反应制备的MoSe2层的垂直堆叠对准中阳离子的可控注入

ACS MATERIALS LETTERS

IF8.7

2023-04-106

PRE

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

SCIENTIFIC REPORTS

IF3.9

2023-01-2626

OAAI

Fully Photon Controlled Synaptic Memristor for Neuro‐Inspired Computing

Advanced Electronic Materials

IF5.3

2023-01-010

OAAI

CMOS-Compatible Memristor for Optoelectronic Neuromorphic Computing

NANOSCALE RESEARCH LETTERS

IF4.1

2022-11-077

OAAI

Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

用于神经形态计算和图像传感的高效隐形TaOx/ZTO双层忆阻器

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-04-2827

PRE

Zn2SnO4 Thin Film Based Nonvolatile Positive Optoelectronic Memory for Neuromorphic Computing

用于神经形态计算的基于Zn2SnO4薄膜的非易失性正光电存储器

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-03-2416

PRE

Oxygen Vacancy Transition in HfOx-Based Flexible, Robust, and Synaptic Bi-Layer Memristor for Neuromorphic and Wearable Applications

用于神经形态和可穿戴应用的基于HfOx的柔性，鲁棒和突触双层忆阻器中的氧空位转变

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2022-02-2449

PRE

Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor

SENSORS

IF3.5

2022-01-056

OAAI

Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive artificial synapses

APL MATERIALS

IF4.5

2021-12-067

Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure

APPLIED PHYSICS LETTERS

IF3.6

2021-04-2710

OAAI

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

APPLIED PHYSICS LETTERS

IF3.6

2021-03-1646

OAAI

A Process-Aware Memory Compact-Device Model Using Long-Short Term Memory

IEEE ACCESS

IF3.6

2021-01-0117

OAAI

Pentafluoropyridine functionalized novel heteroatom-doped with hierarchical porous 3D cross-linked graphene for supercapacitor applications

RSC ADVANCES

IF4.6

2021-01-019

OAAI

Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices

APPLIED PHYSICS LETTERS

IF3.6

2020-08-1921

PREAI

Tseung-Yuen Tseng

个人简介

教育背景

工作经历

荣誉奖项

研究方向