Tseung‐Yuen Tseng - Publications, H-index & Citations

Tseung‐Yuen Tseng

national yang ming chiao tung university (nycu)

65H指数

633论文数

1.7W被引数

收录论文 136

发表时间

Metal interdiffusion enhanced WOx/CuOx heterojunction optoelectronic memristive synapses for face recognition application 金属互扩散增强的WOx/CuOx异质结光电忆阻器突触在人脸识别应用中

APL MATERIALS

IF4.5

2025-05-08

OAAI

Juliano, Hans; Limantoro, Stephen Ekaputra; Simanjuntak, Firman M.; Tseng, Tseung-Yuen

Metal free all oxide SnOx/HfOx bilayer transristor synapse for neuromorphic computing 无金属全氧化物SnOx/HfOx双层晶体管突触用于类脑计算

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-03-17

OAAI

Patnaik, Asutosh; Panda, Debashis; Chen, Ping-Xing; Sahoo, Narayan; Tseng, Tseung-Yuen

All-Optically Regulated ITO/Cu2O/WO3/ITO Memristor for Optoelectronic Neuromorphic Computing 用于光电神经形态计算的全光调节ITO/Cu2O/WO3/ITO忆阻器

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-07-01

OAAI

Wu, Facai; Tseng, Tseung-Yuen

Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction

APPLIED PHYSICS LETTERS

IF3.6

2024-03-25

OAAI

Shrivastava, Saransh; Chi, Hsiao-Ni; Limantoro, Stephen Ekaputra; Juliano, Hans; Tseng, Tseung-Yuen

Harnessing a WOx-based flexible transparent memristor synapse with a hafnium oxide layer for neuromorphic computing

NANOSCALE

IF5.1

2024-01-01

PREAI

Panda, Debashis; Hui, Yu-Fong; Tseng, Tseung-Yuen

Two-Dimensional (2D) Materials-Inserted Conductive Bridge Random Access Memory: Controllable Injection of Cations in Vertical Stacking Alignment of MoSe2 Layers Prepared by Plasma-Assisted Chemical Vapor Reaction 二维 (2D) 材料-插入的导电桥随机存取存储器: 通过等离子体辅助化学气相反应制备的MoSe2层的垂直堆叠对准中阳离子的可控注入

ACS MATERIALS LETTERS

IF8.7

2023-04-10

PREAI

Shen, Ying-Chun; Chen, Chung-Yu; Lee, Ling; Chiang, Chun-Hsiu; Hsu, Yu-Chieh; Cyu, Ruei-Hong; Peng, Yu-Ren; Yu, Yi-Jen; Kuo, Hao-chung; Tseng, Tseung-Yuen; Chueh, Yu-Lun

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

SCIENTIFIC REPORTS

IF3.9

2023-01-26

OAAI

Chen, Ping-Xing; Panda, Debashis; Tseng, Tseung-Yuen

CMOS-Compatible Memristor for Optoelectronic Neuromorphic Computing

NANOSCALE RESEARCH LETTERS

IF4.1

2022-11-07

OAAI

Wu, Facai; Chou, Chien-Hung; Tseng, Tseung-Yuen

Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing 用于神经形态计算和图像传感的高效隐形TaOx/ZTO双层忆阻器

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-04-28

PREAI

Kumar, Dayanand; Shrivastava, Saransh; Saleem, Aftab; Singh, Amit; Lee, Hoonkyung; Wang, Yeong-Her; Tseng, Tseung-Yuen

Zn2SnO4 Thin Film Based Nonvolatile Positive Optoelectronic Memory for Neuromorphic Computing 用于神经形态计算的基于Zn2SnO4薄膜的非易失性正光电存储器

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-03-24

PREAI

Shrivastava, Saransh; Lin, Yu-Tang; Pattanayak, Bhaskar; Pratik, Sparsh; Hsu, Chia-Cheng; Kumar, Dayanand; Lin, Albert S.; Tseng, Tseung-Yuen

Oxygen Vacancy Transition in HfOx-Based Flexible, Robust, and Synaptic Bi-Layer Memristor for Neuromorphic and Wearable Applications 用于神经形态和可穿戴应用的基于HfOx的柔性，鲁棒和突触双层忆阻器中的氧空位转变

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2022-02-24

PREAI

Saleem, Aftab; Kumar, Dayanand; Singh, Amit; Rajasekaran, Sailesh; Tseng, Tseung-Yuen

Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor

SENSORS

IF3.5

2022-01-05

OAAI

Singh, Pragya; Simanjuntak, Firman Mangasa; Hu, Li-Lun; Tseng, Tseung-Yuen; Zan, Hsiao-Wen; Chu, Jinn P.

Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive artificial synapses

APL MATERIALS

IF4.5

2021-12-06

OAAI

Simanjuntak, Firman Mangasa; Hsu, Chun-Ling; Abbey, Thomas; Chang, Lung-Yu; Rajasekaran, Sailesh; Prodromakis, Themis; Tseng, Tseung-Yuen

Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure

APPLIED PHYSICS LETTERS

IF3.6

2021-04-27

OAAI

Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Panda, Debashis; Rajasekaran, Sailesh; Rullyani, Cut; Madhaiyan, Govindasamy; Prodromakis, Themistoklis; Tseng, Tseung-Yuen

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

APPLIED PHYSICS LETTERS

IF3.6

2021-03-16

OAAI

Saleem, Aftab; Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Rajasekaran, Sailesh; Tseng, Tseung-Yuen; Prodromakis, Themis

A Process-Aware Memory Compact-Device Model Using Long-Short Term Memory

IEEE ACCESS

IF3.6

2021-01-01

OAAI

Lin, Albert S.; Pratik, Sparsh; Ota, Jun; Rawat, Tejender Singh; Huang, Tzu-Hsiang; Hsu, Chun-Ling; Su, Wei-Ming; Tseng, Tseung-Yuen

Pentafluoropyridine functionalized novel heteroatom-doped with hierarchical porous 3D cross-linked graphene for supercapacitor applications

RSC ADVANCES

IF4.6

2021-01-01

OAAI

Kumar, Amit; Tan, Chih-Shan; Kumar, Nagesh; Singh, Pragya; Sharma, Yogesh; Leu, Jihperng; Huang, E-Wen; Winie, Tan; Wei, Kung-Hwa; Tseng, Tseung Yuen

Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices

APPLIED PHYSICS LETTERS

IF3.6

2020-08-19

PREAI

Chang, Lung-Yu; Simanjuntak, Firman Mangasa; Hsu, Chun-Ling; Chandrasekaran, Sridhar; Tseng, Tseung-Yuen

Fast, Highly Flexible, and Transparent TaOx-Based Environmentally Robust Memristors for Wearable and Aerospace Applications

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2020-08-11

PREAI

Rajasekaran, Sailesh; Simanjuntak, Firman Mangasa; Panda, Debashis; Chandrasekaran, Sridhar; Aluguri, Rakesh; Saleem, Aftab; Tseng, Tseung-Yuen

Cathodic plasma-induced syntheses of graphene nanosheet/MnO2/WO3 architectures and their use in supercapacitors

ELECTROCHIMICA ACTA

IF5.6

2020-05-01

PREAI

Huang, Shih-Yu; Phuoc-Anh Le; Yen, Po-Jen; Lu, Yi-Chun; Sahoo, Sumanta Kumar; Cheng, Hao-Wen; Chiu, Po-Wen; Tseng, Tseung-Yuen; Wei, Kung-Hwa

研究方向