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Wei Zhang

Dalian Maritime University

H指数:15

被引数:984

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TCAD analysis of SiC trench MOSFET structures with improved frequency figure of merit

SiC沟槽MOSFET结构的TCAD分析与改进频率性能指标

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IF2.1

2025-09-300

PRE

RIS-Assisted Self-Interference Mitigation for In-Band Full-Duplex Transceivers

IEEE TRANSACTIONS ON COMMUNICATIONS

IF8.3

2023-09-019

OA

Designing intelligent self-checkup based technologies for everyday healthy living

INTERNATIONAL JOURNAL OF HUMAN-COMPUTER STUDIES

IF5.1

2022-10-013

OAAI

Hybrid Interference Mitigation Using Analog Prewhitening

IEEE TRANSACTIONS ON WIRELESS COMMUNICATIONS

IF10.7

2021-10-015

OAAI

Flexible and Stretchable Dry Active Electrodes With PDMS and Silver Flakes for Bio-Potentials Sensing Systems

IEEE SENSORS JOURNAL

IF4.5

2021-05-1533

PREAI

Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-05-2925

OAAI

Mesoporous TiO2/TiC@C Composite Membranes with Stable TiO2-C Interface for Robust Lithium Storage

IF4.1

2018-05-0145

OAAI

Uniform Ordered Two-Dimensional Mesoporous TiO2 Nanosheets from Hydrothermal-Induced Solvent-Confined Monomicelle Assembly

水热诱导的溶剂限制单体组装的均匀有序二维介孔TiO2纳米片

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

IF15.6

2018-03-05249

OAAI

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al2O3-Dielectric

CHINESE PHYSICS LETTERS

IF4.2

2016-05-123

PREAI

Synthesis of POSS-Based Ionic Conductors with Low Glass Transition Temperatures for Efficient Solid-State Dye-Sensitized Solar Cells

用于高效固态染料敏化太阳能电池的具有低玻璃化转变温度的POSS基离子导体的合成

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2014-06-2317

PREAI

POSS with eight imidazolium iodide arms for efficient solid-state dye-sensitized solar cells

CHEMICAL COMMUNICATIONS

IF4.2

2014-01-0129

PREAI

Coating cells with cationic silica-magnetite nanocomposites for rapid purification of integral plasma membrane proteins

IF3.9

2011-07-2119

PRE

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

APPLIED SURFACE SCIENCE

IF6.9

2006-08-017

PREAI