Patrick Waltereit - Publications, H-index & Citations

Patrick Waltereit

Fraunhofer Institute for Applied Solid State Physics IAF

37H指数

224论文数

6.7K被引数

收录论文 39

发表时间

Back-Gated GaN-on-Si HEMTs in Multistage Cascodes Si基氮化镓高电子迁移率晶体管在多级级联电路中的应用

IEEE Transactions on Electron Devices

IF3.2

2026-06-17

OAAI

Richard Reiner; Fouad Benkhelifa; Michael Basler; Stefan Moench; Daniel Fugmann; Patrick Waltereit; Stefan Müller; Rüdiger Quay

Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights AlScN/GaN HEMT器件在脉冲测量和HTRB步进应力测试下的可靠性：实验与TCAD分析

IEEE Journal of the Electron Devices Society

IF2.4

2026-01-01

PREAI

Ercolano, Franco; Balestra, Luigi; Krause, Sebastian; Leone, Stefano; Streicher, Isabel; Waltereit, Patrick; Dammann, Michael; Reggiani, Susanna

Self-Compatible Transistors in GaN-on-Si Technology for High-Voltage Cascodes 在GaN-on-Si技术中的自兼容晶体管用于高压级联电路

IEEE Transactions on Electron Devices

IF3.2

2025-10-03

OAAI

Richard Reiner; Patrick Waltereit; Michael Basler; Daniel Grieshaber; Stefan Mönch; Rüdiger Quay

Three-Phase Motor Inverter and Current Sensing GaN Power IC

SENSORS

IF3.5

2023-07-19

OAAI

Moench, Stefan; Reiner, Richard; Basler, Michael; Grieshaber, Daniel; Benkhelifa, Fouad; Waltereit, Patrick; Quay, Ruediger

Voltage-margin limiting mechanisms of AlScN-based HEMTs

APPLIED PHYSICS LETTERS

IF3.6

2023-07-17

PREAI

Doering, P.; Krause, S.; Waltereit, P.; Brueckner, P.; Leone, S.; Streicher, I.; Mikulla, M.; Quay, R.

Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Deposition

CRYSTAL GROWTH & DESIGN

IF3.4

2023-01-05

PREAI

Streicher, Isabel; Leone, Stefano; Manz, Christian; Kirste, Lutz; Prescher, Mario; Waltereit, Patrick; Mikulla, Michael; Quay, Rudiger; Ambacher, Oliver

Enhancing Electrocaloric Heat Pump Performance by Over 99% Efficient Power Converters and Offset Fields

IEEE ACCESS

IF3.6

2022-01-01

OAAI

Moench, Stefan; Reiner, Richard; Waltereit, Patrick; Molin, Christian; Gebhardt, Sylvia; Bach, David; Binninger, Roland; Bartholome, Kilian

GaN Active Rectifier Diode

IEEE OPEN JOURNAL OF POWER ELECTRONICS

IF3.9

2022-01-01

OAAI

Basler, Michael; Reiner, Richard; Moench, Stefan; Waltereit, Patrick; Quay, Rudiger

PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors PCB嵌入式gan-on-si半桥和驱动器ic，带有封装栅极和直流链路电容器

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2021-01-01

OAAI

Moench, Stefan; Reiner, Richard; Waltereit, Patrick; Benkhelifa, Fouad; Hueckelheim, Jan; Meder, Dirk; Zink, Martin; Kaden, Thomas; Noll, Stefan; Mansfeld, Sebastian; Mingirulli, Nicola; Quay, Ruediger; Kallfass, Ingmar

Building Blocks for GaN Power Integration

IEEE ACCESS

IF3.6

2021-01-01

OAAI

Basler, Michael; Reiner, Richard; Moench, Stefan; Benkhelifa, Fouad; Doering, Philipp; Waltereit, Patrick; Quay, Ruediger; Ambacher, Oliver

Adaptive low-temperature covalent bonding of III-nitride thin films by extremely thin water interlayers

APPLIED PHYSICS LETTERS

IF3.6

2019-06-28

PREAI

Gerrer, Thomas; Graff, Andreas; Simon-Najasek, Michl; Czap, Heiko; Maier, Thomas; Benkhelifa, Fouad; Mueller, Stefan; Nebel, Christoph; Waltereit, Patrick; Quay, Ruediger; Cimalla, Volker

The Sky's the Limit

IEEE MICROWAVE MAGAZINE

IF2.6

2014-03-01

PREAI

Emrick, Rudy; Cruz, Pedro; Carvalho, Nuno B.; Gao, Steven; Quay, Ruediger; Waltereit, Patrick

Impact of Al content on transport properties of two-dimensional electron gas in GaN/AlxGa1-xN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2010-10-08

PREAI

Polyakov, V. M.; Cimalla, V.; Lebedev, V.; Koehler, K.; Mueller, S.; Waltereit, P.; Ambacher, O.

Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2010-06-25

PREAI

Lim, T.; Aidam, R.; Kirste, L.; Waltereit, P.; Quay, R.; Mueller, S.; Ambacher, O.

Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing (vol 85, pg 5254, 2004)

APPLIED PHYSICS LETTERS

IF3.6

2005-01-31

OAAI

Yu, HJ; McCarthy, L; Xing, H; Waltereit, P; Shen, L; Keller, S; Denbaars, SP; Speck, JS; Mishra, UK

Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

APPLIED PHYSICS LETTERS

IF3.6

2005-01-07

OAAI

Chakraborty, A; Keller, S; Meier, C; Haskell, BA; Keller, S; Waltereit, P; DenBaars, SP; Nakamura, S; Speck, JS; Mishra, UK

Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%

APPLIED PHYSICS LETTERS

IF3.6

2004-04-12

PREAI

Waltereit, P; Sato, H; Poblenz, C; Green, DS; Brown, JS; McLaurin, M; Katona, T; DenBaars, SP; Speck, JS; Liang, JH; Kato, M; Tamura, H; Omori, S; Funaoka, C

Nonpolar InxGa1-xN/GaN(1(1)over-bar00) multiple quantum wells grown on γ-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (vol 67, art no 041306, 2003) -: art. no. 129902

PHYSICAL REVIEW B

IF3.7

2004-03-01

OAAI

Sun, YJ; Brandt, O; Cronenberg, S; Dhar, S; Grahn, HT; Ploog, KH; Waltereit, P; Speck, JS

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2004-01-26

297

PREAI