Min Zeng - Publications, H-index & Citations

Min Zeng

Peking University

7H指数

20论文数

196被引数

收录论文 7

发表时间

Reliability Improvement of Top-gate ITO Transistors by Post-metal Annealing at 450 °C 通过450 °C后金属退火提高顶栅ITO晶体管的可靠性

IEEE Electron Device Letters

IF4.5

2026-08-12

PREAI

Zhiyu Wang; Qianlan Hu; Tianyue Fu; Wenjie Zhao; Min Zeng; Shiyuan Liu; Yanqing Wu

A Model-Driven Design Optimizations of Ferroelectric Tunneling Junctions With Interfacial Layers 基于界面层的铁电隧穿结模型驱动设计优化

IEEE Transactions on Electron Devices

IF3.2

2025-11-12

PREAI

Ning Feng; Min Zeng; Jiajun Qiu; Ning Ji; Xiaobao Zhu; Shiwei Yan; Tianyue Fu; Runsheng Wang; Yanqing Wu; Lining Zhang

3D stacked IGZO 2T0C DRAM array with multibit capability for computing in memory applications 具有多比特能力的3D堆叠IGZO 2T0C DRAM阵列，用于存内计算应用

SCIENCE ADVANCES

IF12.5

2025-05-23

OAAI

Li, Qijun; Hu, Qianlan; Zhu, Shenwu; Zeng, Min; Zhao, Wenjie

Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors

APPLIED PHYSICS REVIEWS

IF11.6

2023-01-25

PREAI

Shi, Xinhang; Li, Xuefei; Guo, Qi; Zeng, Min; Wang, Xin; Wu, Yanqing

Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics

NANO LETTERS

IF9.1

2022-09-09

PREAI

Shi, Xinhang; Li, Xuefei; Guo, Qi; Gao, Han; Zeng, Min; Han, Yibo; Yan, Shiwei; Wu, Yanqing

Regional carrying capacity evaluation and prediction based on GIS in the Yangtze River Delta, China

INTERNATIONAL JOURNAL OF GEOGRAPHICAL INFORMATION SCIENCE

IF5.1

2011-03-01

PREAI

Chen, Jian-Ping; Zeng, Min; Duan, Yi-Jun

First Demonstration of High-Temperature Reliability on La:HZO-La:In₂O₃ FeFET With High Endurance of 10¹⁰ at 125 °C 首次在La:HZO-La:In₂O₃ FeFET上展示高温可靠性，其高耐久性达到10¹⁰次循环，温度为125 °C。

IEEE Electron Device Letters

IF4.5

PREAI

Min Zeng; Shiwei Yan; Shiyuan Liu; Tianyue Fu; Qianlan Hu; Yanqing Wu

研究方向