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A transient site balance model for atomic layer etching
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DOI：10.1088/1361-6595/ad5d12.png)
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We present a transient site balance model of plasma-assisted atomic layer etching of silicon (Si) with alternating exposure to chlorine gas (Cl2) and argon ions (Ar+). Molecular dynamics (MD) simulation results are used to provide parameters for the model. The model couples the dynamics of a top monolayer surface region ('top layer') and a perfectly mixed subsurface region ('mixed layer'). The differential equations describing the rates of change of the Cl coverage in the two layers are transient mass balances. Model predictions include Cl coverages and rates of etching of various species from the surface as a function of Cl2 or Ar+ fluence. The simplified phenomenological model reproduces the MD simulation results well over a range of conditions. Comparing model predictions directly to experimental optical emission spectroscopy data, as reported in a previous paper (Vella et al 2023 J. Vac. Sci. Technol. A 41, 062602), provides further evidence of the accuracy of the model.
Keyword:
ALE
site balance model
transient
molecular dynamics
期刊
IF:
3.3
论文数:
4.9K
被引数:
1.2W
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Cl2 dissociation on Si(100)-(2x1):: A statistical study by scanning tunneling microscopy.png)
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