Implementation of Boolean Logic Operation in Embedded Flash Memory for In-Memory Computing Applications

Jinhyeok Kim

doi:10.1109/TED.2026.3659834

2026-02-12

PRE

DOI：10.1109/TED.2026.3659834

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摘要

En 中文

本文首次提出了一种基于嵌入式闪存（eFlash）的顺序存内计算技术，用于解决以往依赖忆阻器器件的方法所面临的集成挑战。在本工作中，布尔基本操作在eFlash阵列中被执行并作为非易失性单元状态进行保持，而级联操作则通过系统级顺序执行来实现。忆阻器器件与标准CMOS逻辑工艺的不兼容性限制了其实际集成。所提出的基于eFlash的方法与CMOS电路具有完全兼容性，从而提高了运行速度并降低了能耗。采用180纳米低功耗CMOS工艺设计并制造了一款测试芯片，成功展示了在制造的嵌入式nor闪存测试芯片上执行任意布尔逻辑操作。

Keyword:

Boolean logic operation

embedded flash (eFlash) memory

embedded nor flash memory

in-memory computing

期刊

IEEE Transactions on Electron Devices

IF:

3.2

论文数:

725

被引数:

3.7W

机构

university of seoul

学者数:

640

论文数: 292

被引数: 0

samsung electronics company ltd

学者数:

论文数: 3

被引数: 0

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