Rodrigo T. Doria - Publications, H-index & Citations

Rodrigo T. Doria

centro universitario da fei

19H指数

181论文数

2.1K被引数

收录论文 7

发表时间

Geometrical and thermal effects on mobility and analog parameters of AlGaN/GaN HEMTs on silicon substrates 硅基AlGaN/GaN HEMTs的几何和热效应对其迁移率和模拟参数的影响

Solid-State Electronics

IF1.4

2025-12-01

PREAI

de Andrade, Maria Gloria Cano; Baptista Junior, Braz; Panzo, Eduardo Canga; Doria, Rodrigo T.; Trevisoli, Renan; Simoen, Eddy

Evaluation of a single interface trap position on the low-frequency noise of junctionless nanowire transistors 单界面陷阱位置对结less纳米线晶体管低频噪声的影响评估

SOLID-STATE ELECTRONICS

IF1.4

2025-12-01

PREAI

Silva, Everton M.; Trevisoli, Renan; Doria, Rodrigo T.

Modeling Schottky Diode Rectifiers Considering the Reverse Conduction for RF Wireless Power Transfer

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2022-03-01

PREAI

Trevisoli, Renan; da Paz, Humberto P.; da Silva, Vinicius S.; Doria, Rodrigo T.; Casella, Ivan R. S.; Capovilla, Carlos E.

Analysis of the leakage current in junctionless nanowire transistors

APPLIED PHYSICS LETTERS

IF3.6

2013-11-11

PREAI

Trevisoli, Renan; Doria, Rodrigo Trevisoli; de Souza, Michelly; Pavanello, Marcelo Antonio

The zero temperature coefficient in junctionless nanowire transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-08-06

PREAI

Trevisoli, Renan Doria; Doria, Rodrigo Trevisoli; de Souza, Michelly; Das, Samaresh; Ferain, Isabelle; Pavanello, Marcelo Antonio

Low subthreshold slope in junctionless multigate transistors

APPLIED PHYSICS LETTERS

IF3.6

2010-03-10

118

OAAI

Lee, Chi-Woo; Nazarov, Alexei N.; Ferain, Isabelle; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran; Doria, Rodrigo T.; Colinge, Jean-Pierre

Reduced electric field in junctionless transistors

APPLIED PHYSICS LETTERS

IF3.6

2010-02-15

265

OAAI

Colinge, Jean-Pierre; Lee, Chi-Woo; Ferain, Isabelle; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran; Nazarov, Alexei N.; Doriac, Rodrigo T.

研究方向