SiC-based high electron mobility transistor

doi:10.1063/5.0202925

2024-03-18

PRE

DOI：10.1063/5.0202925

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摘要

En 中文

This paper describes the fabrication of a SiC-based high electron mobility transistor (HEMT). A single-crystal 3C-SiC layer was grown on a C-face 4H-SiC substrate, and 2D electron gas was induced at the 3C-SiC/4H-SiC heterointerface due to the unique polarization physics. The measured Hall mobility of the 2DEG was 586 cm(2)/V s at room temperature. Source, gate, and drain electrodes were fabricated on the 3C-SiC surface. The drain current for the fabricated SiC-HEMT was measured to be 47.5 mA/mm, and the transconductance was estimated to be 13.5 mS/mm.

Keyword:

THERMAL-EXPANSION

HETEROSTRUCTURES

POLARIZATION

GASES

期刊

Applied Physics Letters

IF:

3.6

论文数:

10.4W

被引数:

17.8W

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